參數(shù)資料
型號(hào)： KFG1216U2A-FIB5
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁數(shù)： 8/114頁
文件大?。?/td> 1382K
代理商： KFG1216U2A-FIB5
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
8
OneNAND
is a monolithic integrated circuit with a NAND Flash array using a NOR Flash interface. This device includes control
logic, a NAND Flash array, and 5KB of internal BufferRAM. The BufferRAM reserves 1KB for boot code buffering (BootRAM) and 4KB
for data buffering (DataRAM), split between 2 independent buffers. It has a x16 Host Interface and a random access time speed of
~76ns.
The device operates up to a maximum host-driven clock frequency of 54MHz for synchronous reads at Vcc(or Vccq. Refer to chapter
4.2)
with minimum 4-clock latency. Below 40MHz it is accessible with minimum 3-clock latency. Appropriate wait cycles are deter-
mined by programmable read latency.
OneNAND provides for multiple sector read operations by assigning the number of sectors to be read in the sector counter
register. The device includes one block-sized OTP (One Time Programmable) area that can be used to increase system security or
to provide identification capabilities.
1.6
General Overview
相關(guān)PDF資料
PDF描述
KFG1216U2A-FIB6 FLASH MEMORY
KFG1216U2A-FID5 FLASH MEMORY
KFG1216U2A-FID6 FLASH MEMORY
KFG1G1612M-DEB5 FLASH MEMORY(54MHz)
KFG1G1612M-DED5 FLASH MEMORY(54MHz)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFG1216U2A-FIB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216U2A-FID5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216U2A-FID6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216U2B-DIB6 制造商:Samsung Semiconductor 功能描述:
KFG1216U2M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
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