參數(shù)資料
型號(hào)： KFG1216U2M-DEB
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁(yè)數(shù)： 75/93頁(yè)
文件大?。?/td> 1219K
代理商： KFG1216U2M-DEB
OneNAND512/OneNAND1GDDP
FLASH MEMORY
75
ABSOLUTE MAXIMUM RATINGS
NOTES
:
1. Minimum DC voltage is -0.5V on Input/ Output pins. During transitions, this level should not fall to POR level(typ. 1.5V) .
Maximum DC voltage is Vcc+0.6V on input / output pins which, during transitions, may overshoot to Vcc+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
KFG1216Q2M
KFH1G16Q2M
KFG1216D2M
KFH1G16D2M
KFG1216U2M
KFH1G16U2M
Voltage on any pin relative
to V
SS
Vcc
Vcc
-0.5 to + 2.45
-0.6 to + 4.6
-0.6 to + 4.6
V
All Pins
V
IN
-0.5 to + 2.45
-0.6 to + 4.6
-0.6 to + 4.6
Temperature Under Bias
Extended
T
bias
-30 to +125
-30 to +125
-30 to +125
°
C
Industrial
-
-
-40 to +125
Storage Temperature
T
stg
-65 to +150
-65 to +150
-65 to +150
°
C
Short Circuit Output Current
I
OS
5
5
5
mA
Operating Temperature
T
A
(Extended Temp.)
-30 to + 85
-30 to + 85
-
°
C
T
A
(Industrial Temp.)
-
-
-40 to + 85
RECOMMENDED OPERATING CONDITIONS
( Voltage reference to GND )
NOTES
:
1. The system power should reach 1.7V after POR triggering level(typ. 1.5V) within 400us.
2. Vcc-Core should reach the operating voltage level prior to Vcc-IO.
Parameter
Symbol
1.8V Device
2.65V Device
3.3V Device
Unit
Min
Typ.
Max
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC
-Core/
V
CC
-IO
1.7
1.8
1.95
2.4
2.65
2.9
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
0
0
0
0
0
0
V
相關(guān)PDF資料
PDF描述
KFH1216U2M-DEB FLASH MEMORY
KFG1216U2M-DED FLASH MEMORY
KFH1216U2M-DED FLASH MEMORY
KFH1G16Q2M-DEB FLASH MEMORY
KFG1216Q2M-DEB FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFG1216U2M-DED 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216U2M-DIB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216U2M-DID 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1G1612M-DEB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFG1G1612M-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
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