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參數(shù)資料
| 型號： | KFG1G16D2M-DEB6 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | FLASH MEMORY(54MHz) |
| 中文描述： | 閃存（54MHz之間） |
| 文件頁數(shù)： | 26/93頁 |
| 文件大?。?/td> | 1219K |
| 代理商： | KFG1G16D2M-DEB6 |
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OneNAND512/OneNAND1GDDP
FLASH MEMORY
26
7. Detailed address map for registers
Address
(word order)
Address
(byte order)
Name
Host
Access
Description
F000h
1E000h
Manufacturer ID
R
Manufacturer identification
F001h
1E002h
Device ID
R
Device identification
F002h
1E004h
Version ID
R
Version identification
F003h
1E006h
Data Buffer size
R
Data buffer size
F004h
1E008h
Boot Buffer size
R
Boot buffer size
F005h
1E00Ah
Amount of
buffers
R
Amount of data/boot buffers
F006h
1E00Ch
Technology
R
Info about technology used for OneNAND
F007h~F0FFh
1E00Eh~1E1FEh
Reserved
-
Reserved for user
F100h
1E200h
Start address 1
R/W
Chip address for selection of NAND
Core in DDP & Block address
F101h
1E202h
Start address 2
R/W
Chip address for selection of BufferRAM in DDP
F102h
1E204h
Start address 3
R/W
Destination Block address for Copy back program
F103h
1E206h
Start address 4
R/W
Destination Page & Sector address for Copy
back program
F104h
1E208h
Start address 5
-
N/A
F105h
1E20Ah
Start address 6
-
N/A
F106h
1E20Ch
Start address 7
-
N/A
F107h
1E20Eh
Start address 8
R/W
NAND Flash Page & Sector address
F108h~F1FFh
1E210h~1E3FEh
Reserved
-
Reserved for user
F200h
1E400h
Start Buffer
R/W
Buffer Number for the page data transfer to/from the
OneNAND and the start Buffer Address
The meaning is with which buffer to start and how many
buffers to use for the data transfer
F201h~F207h
1E402h~1E40Eh
Reserved
-
Reserved for user
F208h~F21Fh
1E410h~1E43Eh
Reserved
-
Reserved for vendor specific purposes
F220h
1E440h
Command
R/W
Host control and OneNAND operation commands
F221h
1E442h
System
Configuration 1
R, R/W
OneNAND and Host Interface Configuration
F222h
1E444h
System
Configuration 2
-
N/A
F223h~F22Fh
1E446h~1E45Eh
Reserved
-
Reserved for user
F230h~F23Fh
1E460h~1E47Eh
Reserved
-
Reserved for vendor specific purposes
F240h
1E480h
Controller Status
R
Controller Status and result of OneNAND operation
F241h
1E482h
Interrupt
R/W
OneNAND Command Completion Interrupt Status
F242h~F24Bh
1E484h~1E496h
Reserved
-
Reserved for user
F24Ch
1E498h
Start
Block Address
R/W
Start OneNAND block address to unlock in Write
Protection mode
F24Dh
1E49Ah
End
Block Address
R/W
End OneNAND block address to unlock in Write
Protection mode
F24Eh
1E49Ch
Write Protection
Status
R
Current OneNAND Write Protection status
(unlocked/locked/tight-locked)
F24Fh~FEFFh
1E49Eh~1FDFEh
Reserved
-
Reserved for user
相關PDF資料 |
PDF描述 |
|---|---|
| KFG1G16D2M-DED | FLASH MEMORY |
| KFG1G16D2M-DED5 | FLASH MEMORY(54MHz) |
| KFG1G16D2M-DED6 | FLASH MEMORY(54MHz) |
| KFG1G16D2M-DIB | FLASH MEMORY |
| KFG1G16D2M-DIB6 | FLASH MEMORY(54MHz) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KFG1G16D2M-DED | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KFG1G16D2M-DED5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFG1G16D2M-DED6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFG1G16D2M-DIB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KFG1G16D2M-DIB5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
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