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參數(shù)資料
| 型號(hào)： | KFG1G16D2M-DED5 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | FLASH MEMORY(54MHz) |
| 中文描述： | 閃存（54MHz之間） |
| 文件頁(yè)數(shù)： | 56/93頁(yè) |
| 文件大?。?/td> | 1219K |
| 代理商： | KFG1G16D2M-DED5 |
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OneNAND512/OneNAND1GDDP
FLASH MEMORY
56
Erase Operation
The device can be erased in block unit. To erase a block is to write 1
′
s into the desired memory block by executing the Internal Erase
Routine. In order to perform the Internal Erase Routine, command sequence is necessary. First, host sets the block address of the
memory location. Second, erase command initiates the internal erase routine. During the execution of the Routine, the host is not
required to provide further controls or timings. During the Internal erase routine, commands except reset command written to the
device will be ignored.
Note that a reset during a erase operation will cause data corruption at the corresponding location.
Start
Write ’DFS*, FBA’ of Flash
Add: F100h DQ=DFS*, FBA
Write ’Erase’ Command
Add: F220h DQ=0094h
Wait for INT register
low to high transition
Add: F241h DQ=[15]=INT
Add: F240h DQ[10]=WRc
Erase completed
DQ[10]=0
YES
Erase Error
NO
Read Controller
Status Register
Figure 17. Erase operation flow-chart
: If erase operation results in an error, map out
*
the failing block and replace it with another block.
Write 0 to interrupt register
Add: F241h DQ=0000h
* DFS is for DDP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KFG1G16D2M-DED6 | FLASH MEMORY(54MHz) |
| KFG1G16D2M-DIB | FLASH MEMORY |
| KFG1G16D2M-DIB6 | FLASH MEMORY(54MHz) |
| KFG1G16D2M-DID | FLASH MEMORY |
| KFG1G16D2M-DID5 | FLASH MEMORY(54MHz) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KFG1G16D2M-DED6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFG1G16D2M-DIB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KFG1G16D2M-DIB5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFG1G16D2M-DIB6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFG1G16D2M-DID | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
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