參數(shù)資料
型號: KFG1G16Q2M-DIB5
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY(54MHz)
中文描述: 閃存(54MHz之間)
文件頁數(shù): 45/125頁
文件大?。?/td> 1657K
代理商: KFG1G16Q2M-DIB5
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
45
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
This Read register describes the number of each Buffer.
F005h, default = 0201h
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
DataBufAmount
BootBufAmount
Number of Buffers Information
Register Information
Description
DataBufAmount
The number of data buffers = 2 (2
N
, N=1)
BootBufAmount
The number of boot buffers = 1 (2
N
, N=0)
2.8.8 Technology Register F006h (R)
This Read register describes the internal NAND array technology.
F006h, default = 0000h
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Tech
Technology Information
Technology
Register Setting
NAND SLC
0000h
NAND MLC
0001h
Reserved
0002h ~ FFFFh
2.8.7 Number of Buffers Register F005h (R)
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