參數(shù)資料
型號： KFG2816D1M-DEB
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： OneNAND SPECIFICATION
中文描述： OneNAND的規(guī)格
文件頁數(shù)： 52/87頁
文件大小： 1175K
代理商： KFG2816D1M-DEB
OneNAND128
FLASH MEMORY
52
Figure 21. OTP Load operation flow-chart
OTP Load(OTP Access+Load NAND)
OTP area is separated from NAND Flash Array, so it is accessed by OTP Access command instead of FBA. The content of OTP
could be loaded with the same sequence as normal load operation after being accessed by the command. If user wants to exit from
OTP access mode, Cold, Warm, Hot, and NAND Flash Core Reset operation should be done.
Start
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Write 0 to interrupt register
Add: F241h DQ=0000h
Write 0 to interrupt register
Add: F241h DQ=0000h
Write ’FPA, FSA’ of Flash
1)
Add: F107h DQ=FPA, FSA
OTP Load completed
Write ’Load’ Command
Add: F220h
DQ=0000h or 0013h
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Write ’OTP Access’ Command
Add: F220h DQ=0065h
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=BSA, BSC
Do Cold/Warm/Hot
/NAND Flash Core reset
OTP Exit
Host reads data from
DataRAM
Note 1) FBA(NAND Flash Block Address) could be omitted or any address.
Write ’FBA’ of Flash
1)
Add: F100h DQ=FBA
相關(guān)PDF資料
PDF描述
KFG2816D1M-DED OneNAND SPECIFICATION
KFG2816D1M-DIB OneNAND SPECIFICATION
KFG2816D1M-DID OneNAND SPECIFICATION
KFG2816D1M-PEB OneNAND SPECIFICATION
KFG2816D1M-PED OneNAND SPECIFICATION
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFG2816D1M-DED 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION
KFG2816D1M-DIB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION
KFG2816D1M-DID 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION
KFG2816D1M-PEB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION
KFG2816D1M-PED 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION
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