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參數(shù)資料
| 型號(hào)： | KFG2816D1M-DIB |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | OneNAND SPECIFICATION |
| 中文描述： | OneNAND的規(guī)格 |
| 文件頁(yè)數(shù)： | 48/87頁(yè) |
| 文件大?。?/td> | 1175K |
| 代理商： | KFG2816D1M-DIB |
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OneNAND128
FLASH MEMORY
48
Erase Operation
The device can be erased in block unit. To erase a block is to write 1
′
s into the desired memory block by executing the Internal Erase
Routine. In order to perform the Internal Erase Routine, command sequence is necessary. First, host sets the block address of the
memory location. Second, erase command initiates the internal erase routine. During the execution of the Routine, the host is not
required to provide further controls or timings.
During the Internal erase routine, commands except reset and erase suspend command written to the device will be ignored.
Note that a reset during a erase operation will cause data corruption at the corresponding location.
Figure 17. Erase operation flow-chart
Start
Write ’FBA’ of Flash
Add: F100h DQ=FBA
Write ’Erase’ Command
Add: F220h DQ=0094h
Wait for INT register
low to high transition
Add: F241h DQ=[15]=INT
Add: F240h DQ[10]=Error
Erase completed
DQ[10]=0
YES
Erase Error
NO
Read Controller
Status Register
Write 0 to interrupt register
Add: F241h DQ=0000h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KFG2816D1M-DID | OneNAND SPECIFICATION |
| KFG2816D1M-PEB | OneNAND SPECIFICATION |
| KFG2816D1M-PED | OneNAND SPECIFICATION |
| KFG2816D1M-PIB | OneNAND SPECIFICATION |
| KFH1G16D2M-DEB | FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KFG2816D1M-DID | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION |
| KFG2816D1M-PEB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION |
| KFG2816D1M-PED | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION |
| KFG2816D1M-PIB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION |
| KFG2816D1M-PID | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION |
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