參數(shù)資料
型號： KFG2816U1M-DED
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： OneNAND SPECIFICATION
中文描述： OneNAND的規(guī)格
文件頁數(shù)： 3/87頁
文件大小： 1175K
代理商： KFG2816U1M-DED
OneNAND128
FLASH MEMORY
3
Document Title
OneNAND
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Revision No.
0.0
0.1
1.0
Remark
Advance
Advance
Draft Date
Sep. 9, 2004
Oct. 28, 2004
Jun. 15, 2005
History
1. Initial Issue.
1. Corrected the errata
2. Revised Cold Reset
3. Added TSOP1 Package Information
4. Revised FBGA package type
5. Added 67FBGA Package Information
6. Revised typical tOTP, tLOCK from 300us to 600us
7. Revised max tOTP, tLOCK from 600us to 1000us
8. Deleted Lock All Block, Lock-Tight All Block Operation
9. Added Endurance and Data Retention
10. Revised Load Data into Buffer Operation Sequence
11. Revised Warm Reset
12. Revised Programmable Burst Read Latency Timing Diagram
13. Revised Multi Block Erase Flow Chart
14. Revised Extended Operating Temperature
1. Added Copyright Notice in the beginning
2. Corrected Errata
3. Updated Icc2, Icc4, Icc5, Icc6 and I
SB
4. Revised INT pin description
5. Added OTP erase case NOTE
6. Revised case definitions of Interrupt Status Register
7. Added a NOTE to Command register
8. Added ECClogSector Information table
9. Removed ’data unit based data handling’ from description of Device
Operation
10. Revised description on Warm/Hot/NAND Flash Core Reset
11. Revised Warm Reset Timing
12. Revised description for 4-, 8-, 16-, 32-Word Linear Burst Mode
13. Revised OTP operation description
14. Added note for OTP
L
in Internal Register Reset
15. Removed all block lock default case after cold or warm reset
16. Added explanation for each prohibited case in protect mode
17. Revised the case of writing other commands during Multi Block Erase
routine
18. Added note for Erase Suspend/Resume
19. Added supplemental explanation for ECC Operation
20. Removed classification of ECC error from ECC Operation
21. Removed redundant sentance from ECC Bypass Operation
22. Added technical note for Boot Sequence
23. Added technical note for INT pin connection guide
24. Excluded tOEH from Asynchronous Read Table
25. Revised Asycnchronous Read timing diagram for CE don’t care mode
26. Revised Asynchronous Write timing diagram for CE don’t care mode
27. Revised Load operation timing diagram for CE don’t care mode
相關(guān)PDF資料
PDF描述
KFG2816U1M-DIB OneNAND SPECIFICATION
KFG2816U1M-DID OneNAND SPECIFICATION
KFG2816U1M-PEB OneNAND SPECIFICATION
KFG2816U1M-PED OneNAND SPECIFICATION
KFG2816U1M-PIB OneNAND SPECIFICATION
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFG2816U1M-DIB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION
KFG2816U1M-DID 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION
KFG2816U1M-PEB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION
KFG2816U1M-PED 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION
KFG2816U1M-PIB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION
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