參數(shù)資料
型號： KFG2816U1M-DID
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： OneNAND SPECIFICATION
中文描述： OneNAND的規(guī)格
文件頁數(shù)： 33/87頁
文件大?。?/td> 1175K
代理商： KFG2816U1M-DID
OneNAND128
FLASH MEMORY
33
Figure 5. Cold Reset Timings
Note: 1) Bootcode copy operation starts 400us later than POR activation.
The system power should reach 1.7V after POR triggering level(typ. 1.5V) within 400us for valid boot code data.
2) 1K bytes Bootcode copy takes 70us(estimated) from sector0 and sector1/page0/block0 of NAND Flash array to BootRAM.
Host can read Bootcode in BootRAM(1K bytes) after Bootcode copy completion.
3) INT register goes ‘Low’ to ‘High’ on the condition of ‘Bootcode-copy done’ and RP rising edge.
If RP goes ‘Low’ to ‘High’ before ‘Bootcode-copy done’, INT register goes to ‘Low’ to ‘High’ as soon as ‘Bootcode-copy done’
8.3 Reset Mode
Cold Reset
At system power-up, the voltage detector in the device detects the rising edge of Vcc and releases internal power-up reset signal
which triggers bootcode loading. Bootcode loading means that the boot loader in the device copies designated sized data(1KB) from
the beginning of memory to the BootRAM.
System Power
Sleep
Bootcode copy
Idle
Bootcode - copy done
POR triggering level
3)
2)
RP
INT
OneNAND
Operation
0 (default)
1
IOBE bit
1 (default)
INTpol bit
High-Z
1)
INT bit
0 (default)
1
相關PDF資料
PDF描述
KFG2816U1M-PEB OneNAND SPECIFICATION
KFG2816U1M-PED OneNAND SPECIFICATION
KFG2816U1M-PIB OneNAND SPECIFICATION
KFG2816U1M-PID OneNAND SPECIFICATION
KFG2816D1M-DEB OneNAND SPECIFICATION
相關代理商/技術參數(shù)
參數(shù)描述
KFG2816U1M-PEB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION
KFG2816U1M-PED 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION
KFG2816U1M-PIB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION
KFG2816U1M-PID 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION
KFG2G1612M-DEB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
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