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參數資料
| 型號： | KFG2816U1M-DID |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | OneNAND SPECIFICATION |
| 中文描述： | OneNAND的規(guī)格 |
| 文件頁數： | 50/87頁 |
| 文件大?。?/td> | 1175K |
| 代理商： | KFG2816U1M-DID |
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OneNAND128
FLASH MEMORY
50
Erase Suspend / Resume
Erase Suspend command interrupts Block Erase and Multi Block Erase to load or program data in a block that is not being erased.
When Erase Suspend command is written during Block Erase and Multi Block Erase operation, the device requires a maximum of
500us to suspend erase operation. After the erase operation has been suspended, the device is available for loading or programming
data in a block that is not being erased. For the erase suspend period, Block Erase, Multi Block Erase and Erase Suspend com-
mands are not accepted.
When Erase Resume command is executed, Block Erase and Multi Block Erase operation will resume. The Erase Resume operation
does not actually resume the erase, but starts it again from the beginning. When Erase Suspend and Erase Resume command is
executed, the addresses are in Don’t Care state.
Figure 19. Erase Suspend and Resume operation flow-chart
2) If OTP access mode exit happens with Reset operation during Erase Suspend mode,
Reset operation could hurt the erase operation. So if a user wants to exit from OTP access mode
without the erase operation stop, Reset NAND Flash Core command should be used.
Start
Write ’Erase Suspend
Command’
Add: F220h DQ=00B0h
Wait for INT register
low to high transition for 500us
Add: F241h DQ=[15]=INT
Write 0 to interrupt register
Add: F241h DQ=0000h
Write ’Erase Resume
Command’
Add: F220h DQ=0030h
Wait for INT register
low to high transition
Add: F241h DQ=[15]=INT
Write 0 to interrupt register
Add: F241h DQ=0000h
Another Operation *
* Another Operation ; Load, Program
Copy-back Program, OTP Access
2)
,
Hot Reset, Flash Reset, CMD Reset,
Multi Block Erase Verify, Lock,
Lock-tight, Unlock
Check Controller Status Register
in case of Block Erase
Do Multi Block Erase Verify Read
in case of Multi Block Erase
Note 1) Erase Suspend command input is prohibited during Multi Block Erase address latch period.
相關PDF資料 |
PDF描述 |
|---|---|
| KFG2816U1M-PEB | OneNAND SPECIFICATION |
| KFG2816U1M-PED | OneNAND SPECIFICATION |
| KFG2816U1M-PIB | OneNAND SPECIFICATION |
| KFG2816U1M-PID | OneNAND SPECIFICATION |
| KFG2816D1M-DEB | OneNAND SPECIFICATION |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KFG2816U1M-PEB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION |
| KFG2816U1M-PED | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION |
| KFG2816U1M-PIB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION |
| KFG2816U1M-PID | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION |
| KFG2G1612M-DEB5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
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