參數(shù)資料
型號(hào)： KFH1216U2M-DEB
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁數(shù)： 42/93頁
文件大?。?/td> 1219K
代理商： KFH1216U2M-DEB
OneNAND512/OneNAND1GDDP
FLASH MEMORY
42
Warm Reset
Warm reset means that the host resets the device by RP pin, and then the device logic stops all current operation and executes inter-
nal reset operation(Note 1) synchronized with the falling edge of RP and resets current NAND Flash core operation synchronized with
the rising edge of RP. The device logic will not be reset in case RP pulses shorter than 200ns, but the device guarantees the logic
reset operation in case RP pulse is longer than 200ns. NAND Flash core reset will abort current NAND Flash Core operation. The
contents of memory cells being altered are no longer valid as the data will be partially programmed or erased. Warm reset has no
effect on contents of BootRAM and DataRAM.
Figure 6. Warm Reset Timings
RP
Operation or Idle internal reset operation NAND Flash core reset
initiated by RP high
INT
OneNAND
Operation
initiated by RP low
CE, OE
RDY
Idle
High-Z
High-Z
High-Z
Operation or Idle
Operation
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參數(shù)描述
KFH1216U2M-DED 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFH1216U2M-DIB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFH1216U2M-DID 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFH1G1612M-DEB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFH1G1612M-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
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