參數(shù)資料
型號: KFH1G16D2M-DIB6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY(54MHz)
中文描述: 閃存(54MHz之間)
文件頁數(shù): 91/93頁
文件大小: 1219K
代理商: KFH1G16D2M-DIB6
OneNAND512/OneNAND1GDDP
FLASH MEMORY
91
Erase Command Sequence (last two cycles)
A0:A15
WE
CE
t
DS
t
DH
t
CH
CA
SA
SA
ProIn
Complete
ECD
EMA
AA
DQ0-DQ15
OE
Read Status Data
NOTES:
1. AA = Address of address register
CA = Address of command register
ECD = Erase Command
EMA = Address of memory to be erased
SA = Address of status register
2. “In progress” and “complete” refer to status register
3. Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported.
Figure 38. Block Erase Operations
SWITCHING WAVEFORMS
t
WPL
t
CS
t
WPH
t
WC
CLK
V
IL
Erase Operation
AVD
t
AAVDH
t
AAVDS
t
BERS
INT
bit
t
AVDP
t
VLWH
t
WEA
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