參數(shù)資料
型號: KFH1G16U2M-DIB6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY(54MHz)
中文描述: 閃存(54MHz之間)
文件頁數(shù): 112/125頁
文件大?。?/td> 1657K
代理商: KFH1G16U2M-DIB6
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
112
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
NOTES:
1. AA = Address of address register
CA = Address of command register
ECD = Erase Command
EMA = Address of memory to be erased
SA = Address of status register
2. “In progress” and “complete” refer to status register
3. Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported.
Erase Command Sequence (last two cycles)
A0:A15
WE
CE
t
DS
t
DH
t
CH
CA
SA
SA
In
Progress
Complete
ECD
EMA
AA
DQ0-DQ15
OE
Read Status Data
t
WPL
t
CS
t
WPH
t
WC
CLK
V
IL
t
AH
t
AWES
t
BERS
INT
t
CH
t
CS
6.10 Block Erase Operation Timing
See AC Characteristics Tables 5.7 and 5.8
相關PDF資料
PDF描述
KFH1G16U2M-DID FLASH MEMORY
KFH1G16U2M-DID5 FLASH MEMORY(54MHz)
KFH1G16U2M-DID6 FLASH MEMORY(54MHz)
KFG1G16Q2M-DED5 FLASH MEMORY(54MHz)
KFG1G16Q2M-DED6 FLASH MEMORY(54MHz)
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