參數(shù)資料
型號(hào)： KFH2G16D2M-DIB5
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY(54MHz)
中文描述： 閃存（54MHz之間）
文件頁數(shù)： 81/125頁
文件大小： 1657K
代理商： KFH2G16D2M-DIB5
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
81
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
The Copy-Back Program Operation with Random Data Input in OneNAND consists of 2 phase, Load data into DataRAM, Modify data
and program into designated page. Data from the source page is saved in one of the on-chip DataRAM buffers and modified by the
host, then programmed into the destination page.
As shown in the flow chart, data modification is possible upon completion of load operation. ECC is also available at the end of load
operation. Therefore, using hardware ECC of OneNAND, accumulation of 1 bit error can be avoided.
Copy-Back Program Operation with Random Data Input will be effectively utilized at modifying certain bit, byte, word, or sector of
source page to destination page while it is being copied.
Copy-Back Program Operation with Random Data Input Flow Chart
Start
Write ’DFS*, FBA’ of Flash
Add: F100h DQ=DFS, FBA
Write ’FPA, FSA’ of Flash
Add: F107h DQ=FPA, FSA
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=BSA, BSC
Select DataRAM for DDP
Add: F101h DQ=DBS
Write ’Load’ Command
Add: F220h
DQ=0000h or 0013h
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Read Controller
Status Register
Add: F240h DQ[10]=Error
DQ[10]=0
NO
YES
* DBS, DFS is for DDP
Map Out
Write 0 to interrupt register
Add: F241h DQ=0000h
Copy back completed
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Read Controller
Status Register
Add: F240h DQ[10]=Error
DQ[10]=0
Copy back Error
YES
NO
Random Data Input
Write ’FBA’ of Flash
Add: F100h DQ=FBA
Write ’FPA, FSA’ of Flash
Add: F107h DQ=FPA, FSA
Write ’Program’ Command
Add: F220h
DQ=0080h or 001Ah
Write 0 to interrupt register
Add: F241h DQ=0000h
Add: Random Address in
Selected DataRAM
DQ=Data
3.9.1 Copy-Back Program Operation with Random Data Input
相關(guān)PDF資料
PDF描述
KFH2G16D2M-DIB6 FLASH MEMORY(54MHz)
KFH2G16D2M-DID5 FLASH MEMORY(54MHz)
KFH2G16D2M-DID6 FLASH MEMORY(54MHz)
KFH2G16Q2M-DED5 FLASH MEMORY(54MHz)
KFH2G16Q2M-DED6 FLASH MEMORY(54MHz)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFH2G16D2M-DIB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFH2G16D2M-DID5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFH2G16D2M-DID6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFH2G16Q2M-DEB 制造商:Samsung Semiconductor 功能描述:
KFH2G16Q2M-DEB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
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