參數(shù)資料
型號(hào)： KFH2G16U2M-DID6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY(54MHz)
中文描述： 閃存（54MHz之間）
文件頁數(shù)： 76/125頁
文件大?。?/td> 1657K
代理商： KFH2G16U2M-DID6
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
76
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
Upon power up, the number of initial clock cycles from Valid Address (AVD) to initial data defaults to four clocks.
The number of clock cycles (n) which are inserted after the clock which is latching the address. The host can read the first data with
the (n+1)th rising edge.
The number of total initial access cycles is programmable from three to seven cycles. After the number of programmed burst clock
cycles is reached, the rising edge of the next clock cycle triggers the next burst data.
Four Clock Burst Read Latency (default condition)
3.7.3 Handshaking Operation
The handshaking feature allows the host system to simply monitor the RDY signal from the device to determine
when the initial word of burst data is ready to be read.
To set the number of initial cycles for optimal burst mode, the host should use the programmable burst read latency configuration (see
Section 2.8.19, "System Configuration1 Register").
The rising edge of RDY which is derived from one cycle ahead of data fetch clock indicates the initial word of valid burst data.
t
IAA
Hi-Z
CE
CLK
AVD
OE
RDY
≈
≈
t
RDYS
t
RDYA
DQ0:
DQ15
D6
D7
D0
D1
D2
D3
D7
D0
Hi-Z
≈
≈
≈
0
1
2
3
-1
t
BA
Rising edge of the clock cycle following last read latency
triggers next burst data
A0:
A15
Valid
Address
3.7.2.3 Programmable Burst Read Latency Operation
See Timing Diagrams 6.1 and 6.2
4
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