參數(shù)資料
型號: KFH4G16U2M-DIB6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY(54MHz)
中文描述: 閃存(54MHz之間)
文件頁數(shù): 99/125頁
文件大?。?/td> 1657K
代理商: KFH4G16U2M-DIB6
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
99
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
Referring to the diagram for further illustration, when an error happens in the nth page of block 'A' during program operation, copy
the data in the 1st ~ (n-1)th page to the same location of block 'B' via data buffer0.
Then copy the nth page data of block 'A' in the data buffer1 to the nth page of block 'B' or any free block. Do not further erase or
program block 'A' but instead complete the operation by creating an 'Invalid Block Table' or other appropriate scheme.
Block Replacement Operation Sequence
Data Buffer1 of the device
(assuming the nth page data is maintained)
1st
Block A
Block B
(n-1)th
nth
(page)
{
1st
(n-1)th
nth
(page)
{
an error occurs.
1
2
Data Buffer0 of the device
1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFH4G16U2M-DID5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFH4G16U2M-DID6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
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