參數資料
型號： KFM1G16Q2M-DEB6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MuxOneNAND FLASH MEMORY
中文描述： MuxOneNAND閃存
文件頁數： 115/124頁
文件大?。?/td> 1550K
代理商： KFM1G16Q2M-DEB6
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
6.14 Toggle Bit Timing in Asynchronous Read
(VA Transition Before AVD Low)
FLASH MEMORY
115
6.15 Toggle Bit Timing in Asynchronous Read
(VA Transition After AVD Low)
See AC Characteristics Table 5.5
t
OE
Status RD
1)
t
CE
t
OEZ
t
AVDP
t
AA
CE
OE
WE
A/DQ0:
A/DQ15
AVD
Hi-Z
RDY
2)
t
RC
t
CA
t
CEZ
t
CER
t
AVDO
Hi-Z
t
OE
Status RD
1)
t
OEZ
t
ACC
t
AAVDH
t
AVDP
t
AAVDS
CE
OE
WE
A/DQ0:
A/DQ15
AVD
t
CEZ
t
CA
t
CER
t
AVDO
Hi-Z
Hi-Z
RDY
2)
t
RC
t
CE
Hi-Z
NOTE:
1. VA=Valid Read Address, RD=Read Data.
2. Before IOBE is set to 1, RDY and INT pin are High-Z state.
3. Refer to chapter 5.5 for tASO description and value.
VA
Status RD
Hi-Z
t
ASO
VA
Status RD
t
CA
t
ASO
t
AAVDH
t
AAVDS
VA
1)
VA
1)
NOTE:
1. VA=Valid Read Address, RD=Read Data.
2. Before IOBE is set to 1, RDY and INT pin are High-Z state.
3. Refer to chapter 5.5 for tASO description and value.
See AC Characteristics Table 5.5
相關PDF資料
PDF描述
KFN1G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFM2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DED5 MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
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