參數(shù)資料
型號： KFM1G16Q2M-DEB6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MuxOneNAND FLASH MEMORY
中文描述： MuxOneNAND閃存
文件頁數(shù)： 119/124頁
文件大?。?/td> 1550K
代理商： KFM1G16Q2M-DEB6
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
119
Synchronous Mode Using Interrupt Status Register Bit Polling
When operating synchronously, /CE, /AVD, CLK, /RDY, /OE, and DQ pins on the host and MuxOneNAND are tied together.
Host
MuxOneNAND
RDY
OE
CLK
CE
RDY
OE
CLK
CE
AVD
AVD
DQ
DQ
Asynchronous Mode Using Interrupt Status Register Bit Polling
When configured to operate in an asynchronous mode, /CE and /AVD of the MuxOneNAND are tied to /CE of the Host. CLK is tied to
the Host Vss (Ground). /RDY is tied to a no-connect. /OE and DQ of the MuxOneNAND and Host are tied together.
Host
MuxOneNAND
N.C
OE
CE
RDY
OE
CLK
CE
AVD
DQ
DQ
Vss
相關PDF資料
PDF描述
KFN1G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFM2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DED5 MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
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