參數(shù)資料
型號: KFW2G16U2M-DID5
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY(54MHz)
中文描述: 閃存(54MHz之間)
文件頁數(shù): 51/125頁
文件大小: 1657K
代理商: KFW2G16U2M-DID5
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
51
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
This Read/Write register describes the system configuration.
F221h, default = 40C0h
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R
R
RM
BRL
BL
ECC
RDY
pol
INT
pol
IOBE
RDY
Conf
Reserved(000)
BWPS
Read Mode (RM)
RM
Read Mode
0
Asynchronous read(default)
1
Synchronous read
Read Mode Information[15]
Item
Definition
Description
RM
Read Mode
Selects between asynchronous read mode and
synchronous read mode
Burst Read Latency (BRL)
BRL
Latency Cycles
000
8(N/A)
001
9(N/A)
010
10(N/A)
011
3(up to 40MHz)
100
4(default, min.)
101
5
110
6
111
7
Burst Read Latency (BRL) Information[14:12]
Item
Definition
Description
BRL
Burst Read Latency
Specifies the access latency in the burst read
transfer for the initial access
2.8.19 System Configuration 1 Register F221h (R, R/W)
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