參數(shù)資料
型號: KFW2G16U2M-DID5
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY(54MHz)
中文描述: 閃存(54MHz之間)
文件頁數(shù): 82/125頁
文件大小: 1657K
代理商: KFW2G16U2M-DID5
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
82
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
There are multiple methods for erasing data in the device including Block Erase and Multi-Block Erase.
3.10.1 Block Erase Operation
See Timing Diagram 6.10
The device can erase one block at a time. To erase a block is to write all 1's into the desired memory block by executing the Internal
Erase Routine. All previous data is lost.
Block Erase Operation Flow Chart
Start
Write ’DFS*, FBA’ of Flash
Add: F100h DQ=DFS*, FBA
Write ’Erase’ Command
Add: F220h DQ=0094h
Wait for INT register
low to high transition
Add: F241h DQ=[15]=INT
Add: F240h DQ[10]=Error
Erase completed
DQ[10]=0
YES
Erase Error
NO
Read Controller
Status Register
: If erase operation results in an error, map out
*
the failing block and replace it with another block.
Write 0 to interrupt register
Add: F241h DQ=0000h
DFS* is for DDP
3.10 Erase Operation
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