Analog Integrated Circuit Device Data
8
Freescale Semiconductor
33972
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics
Characteristics noted under conditions 3.1 V
≤ VDD ≤ 5.25 V, 8.0 V ≤ VPWR ≤ 16 V, -40 °C ≤ TC ≤ 125 °C, unless otherwise
noted. Where applicable, typical values reflect the parameter’s approximate average value with VPWR = 13 V, TA = 25 °C.
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCH INPUT
Pulse Wetting Current Time
tPULSE(ON)
15
16
20
ms
Interrupt Delay Time
Normal Mode
tINT-DLY
–
5.0
16
μs
Sleep Mode Switch Scan Time
tSCAN
100
200
300
μs
Calibrated Scan Timer Accuracy
Sleep Mode
tSCAN TIMER
–
10
%
Calibrated Interrupt Timer Accuracy
Sleep Mode
tINT TIMER
–
10
%
Required Low-state Duration on VPWR for Reset(14) VPWR ≤ 0.2 V
tRESET
–
10
μs
Falling Edge of CS to Rising Edge of SCLK
Required Set-up Time
tLEAD
100
–
ns
Falling Edge of SCLK to Rising Edge of CS
Required Set-up Time
tLAG
50
–
ns
SI to Falling Edge of SCLK
Required Set-up Time
tSI(SU)
16
–
ns
Falling Edge of SCLK to SI
Required Hold Time
tSI(HOLD)
20
–
ns
SI, CS, SCLK Signal Rise Ti
me(15)tR(SI)
–
5.0
–
ns
SI, CS, SCLK Signal Fall Time
(15)tF(SI)
–
5.0
–
ns
tSO(EN)
–
55
ns
Time from Rising Edge of CS to SO High-impedance
(17)tSO(DIS)
–
55
ns
Time from Rising Edge of SCLK to SO Data Valid
(18)tVALID
–
25
55
ns
Notes
13.
These parameters are guaranteed by design. Production test equipment uses 4.16 MHz, 5.0 V SPI interface.
14.
This parameter is guaranteed by design but not production tested.
15.
Rise and Fall time of incoming SI, CS, and SCLK signals suggested for design consideration to prevent the occurrence of double pulsing.
16.
Time required for valid output status data to be available on SO pin.
17.
Time required for output states data to be terminated at SO pin.
18.
Time required to obtain valid data out from SO following the rise of SCLK with 200 pF load.