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參數(shù)資料
| 型號： | KITMPR121EVM |
| 廠商： | Freescale Semiconductor |
| 文件頁數(shù)： | 26/27頁 |
| 文件大?。?/td> | 0K |
| 描述： | KIT EVALUATION MPR121 |
| 產(chǎn)品培訓模塊： | MPR121: Low-Power Touch Sensor |
| 標準包裝： | 1 |
| 傳感器類型： | 近程 |
| 接口： | USB |
| 電源電壓： | 5V，USB |
| 嵌入式： | 否 |
| 已供物品： | 4 個板，線纜，文檔 |
| 已用 IC / 零件： | MPR121 |
| 產(chǎn)品目錄頁面： | 2808 (CN2011-ZH PDF) |
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MPR121
Sensors
8
Freescale Semiconductor, Inc.
4
Electrical Characteristics
4.1
Absolute Maximum Ratings
Absolute maximum ratings are stress ratings only and functional operation at the maxima is not guaranteed. Stress beyond the
limits specified in Table 3 may affect device reliability or cause permanent damage to the device. For functional operating
conditions, refer to the remaining tables in this section. This device contains circuitry protecting against damage due to high-static
voltage or electrical fields; however, it is advised that normal precautions be taken to avoid application of any voltages higher
than maximum-rated voltages to this high-impedance circuit.
4.2
ESD and Latch-up Protection Characteristics
Normal handling precautions should be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels of static without
suffering any permanent damage. During the device qualification, ESD stresses were performed for the Human Body Model
(HBM), the Machine Model (MM) and the Charge Device Model (CDM).
A device is defined as a failure if after exposure to ESD pulses, the device no longer meets the device specification. Complete
DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
Table 3. Absolute Maximum Ratings - Voltage (with respect to VSS)
Rating
Symbol
Value
Unit
Supply Voltage
VDD
-0.3 to +3.6
V
Supply Voltage
VREG
-0.3 to +2.75
V
Input Voltage
SCL, SDA, IRQ
VIN
VSS - 0.3 to VDD + 0.3
V
Operating Temperature Range
TO
-40 to +85
°C
GPIO Source Current per Pin
iGPIO
12
mA
GPIO Sink Current per Pin
iGPIO
1.2
mA
Storage Temperature Range
TS
-40 to +125
°C
Table 4. ESD and Latch-up Test Conditions
Rating
Symbol
Value
Unit
Human Body Model (HBM)
VESD
±2000
V
Machine Model (MM)
VESD
±200
V
Charge Device Model (CDM)
VESD
±500
V
Latch-up current at TA = 85°C
ILATCH
±100
mA
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