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參數(shù)資料
| 型號(hào)： | KM23V32005BETY |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M位 (4Mx8 /2Mx16) CMOS掩膜ROM) |
| 中文描述： | 32兆位（4Mx8 / 2Mx16）的CMOS掩模ROM（32兆位（4Mx8 / 2Mx16）的CMOS掩膜光盤） |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | KM23V32005BETY |
KM23V32005B(E)TY/KM23S32005B(E)TY
CMOS MASK ROM
Preliminary
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM
The KM23V32005B(E)TY and KM23S32005B(E)TY are fully
static mask programmable ROM fabricated using silicon gate
CMOS process technology, and is organized either as 4,194,304
x8 bit(byte mode) or as 2,097,152x16 bit(word mode) depending
on BHE voltage level.(See mode selection table)
This device includes page read mode function, page read mode
allows four to eight words of data to read fast in the same page,
CE and A
3
~ A
20
should not be changed.
This device operates with low power supply, and all inputs and
outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The KM23V32005B(E)TY and KM23S32005B(E)TY are pack-
aged in a 48-TSOP1.
GENERAL DESCRIPTION
FEATURES
Switchable organization
4,194,304x8(byte mode)
2,097,152x16(word mode)
Fast access time
Random Access Time/Page Access Time
3.3V Operation : 80/30ns(Max.)
3.0V Operation : 100/30ns(Max.)
2.5V Operation : 120/50ns(Max.)
Supply voltage
KM23V32005B(E)TY : 2.7V ~ 3.6V
KM23S32005B(E)TY : 2.3V ~ 2.7V
Current consumption
Operating : 60mA(Max.)
Standby : 30
μ
A(Max.)
Fully static operation
All inputs and outputs TTL compatible
Three state outputs
Package
-. KM23V(S)32005B(E)TY : 48-TSOP1-1218
A
20
X
A
0~
A
2
A
-1
AND
DECODER
BUFFERS
A
3
Y
AND
DECODER
BUFFERS
MEMORY CELL
MATRIX
(2,097,152x16/
4,194,304x8)
SENSE AMP.
CONTROL
LOGIC
DATA OUT
BUFFERS
CE
OE
BHE
.
.
.
.
.
.
.
.
Q
0
/Q
8
Q
7
/Q
15
. . .
FUNCTIONAL BLOCK DIAGRAM
Pin Name
Pin Function
A
0
- A
2
Page Address Inputs
A
3
- A
20
Address Inputs
Q
0
- Q
14
Data Outputs
Q
15
/A
-1
Output 15(Word mode)/
LSB Address(Byte mode)
BHE
Word/Byte selection
CE
Chip Enable
OE
Output Enable
V
CC
Power
V
SS
Ground
N.C
No Connection
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM23V32005BTY | 32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M位 (4Mx8 /2Mx16) CMOS掩膜ROM) |
| KM23V32005BET | 32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M位(4Mx8 /2Mx16) CMOS掩膜ROM) |
| KM23V32005BT | 32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M位(4Mx8 /2Mx16) CMOS掩膜ROM) |
| KM23V32205BSG | 32M-Bit (2Mx16 /1Mx32) CMOS Mask ROM(32M位 (2Mx16 /1Mx32) CMOS掩膜ROM) |
| KM23V4000DETY | 4M-Bit (512Kx8) CMOS Mask ROM(4M位 (512Kx8) CMOS掩膜ROM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM23V32005BG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M-Bit (4Mx8/2Mx16) COMS MASK ROM |
| KM23V8105D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM |
| KM23V8105DG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM |
| KM23V8105G | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM |
| KM-23YC | 制造商:KINGBRIGHT 制造商全稱:Kingbright Corporation 功能描述:SOT-23 SURFACE MOUNT LED LAMP |
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