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參數資料
| 型號： | KM23V32005BG |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32M-Bit (4Mx8/2Mx16) COMS MASK ROM |
| 中文描述： | 32兆位（4Mx8/2Mx16）COMS衛(wèi)星掩膜ROM |
| 文件頁數： | 1/5頁 |
| 文件大小： | 87K |
| 代理商： | KM23V32005BG |
KM23V32005BG
CMOS MASK ROM
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM
The KM23V32005BG is a fully static mask programmable ROM
fabricated using silicon gate CMOS process technology, and is
organized either as 4,194,304x8 bit(byte mode) or as
2,097,152x16 bit(word mode) depending on BHE voltage
level.(See mode selection table)
This device includes page read mode function, page read mode
allows 8 words(or 16 bytes) of data to read fast in the same
page, CE and A
3
~ A
20
should not be changed.
This device operates with a 3.3V power supply, and all inputs
and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The KM23V32005BG is packaged in a 44-SOP.
GENERAL DESCRIPTION
FEATURES
Switchable organization
4,194,304x8(byte mode)
2,097,152x16(word mode)
Fast access time
Random Access Time : 100ns(Max.)
Page Access Time : 30ns(Max.)
8 words / 16 bytes page access
Supply voltage : single +3.3V
Current consumption
Operating : 60mA(Max.)
Standby : 30
μ
A(Max.)
Fully static operation
All inputs and outputs TTL compatible
Three state outputs
Package
KM23V32005BG : 44-SOP-600
A
20
X
A
0~
A
2
A
-1
AND
DECODER
BUFFERS
A
3
Y
AND
DECODER
BUFFERS
MEMORY CELL
MATRIX
(2,097,152x16/
4,194,304x8)
SENSE AMP.
CONTROL
LOGIC
DATA OUT
BUFFERS
CE
OE
BHE
.
.
.
.
.
.
.
.
Q
0
/Q
8
Q
7
/Q
15
. . .
PIN CONFIGURATION
N.C
A
18
A
17
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
CE
V
SS
OE
Q
0
Q
8
Q
1
Q
9
Q
4
Q
12
Q
5
Q
13
Q
6
V
SS
Q
14
Q
7
Q
15
/A
-1
SOP
KM23V32005BG
FUNCTIONAL BLOCK DIAGRAM
1
2
44
43
42
3
4
41
40
5
6
39
38
7
8
37
36
9
10
35
34
11
12
33
32
13
14
31
30
15
16
29
17
18
28
27
26
19
20
25
24
21
22
23
Q
2
Q
10
Q
3
Q
11
A
20
A
19
A
8
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
BHE
V
CC
Pin Name
Pin Function
A
0
- A
2
Page Address Inputs
A
3
- A
20
Address Inputs
Q
0
- Q
14
Data Outputs
Q
15
/A
-1
Output 15(Word mode)/
LSB Address(Byte mode)
BHE
Word/Byte selection
CE
Chip Enable
OE
Output Enable
V
CC
Power (3.3V)
V
SS
Ground
N.C
No Connection
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