參數(shù)資料
型號(hào): KM23V32005BTY
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M位 (4Mx8 /2Mx16) CMOS掩膜ROM)
中文描述: 32兆位(4Mx8 / 2Mx16)的CMOS掩模ROM(32兆位(4Mx8 / 2Mx16)的CMOS掩膜光盤)
文件頁數(shù): 4/5頁
文件大小: 49K
代理商: KM23V32005BTY
KM23V32005B(E)TY/KM23S32005B(E)TY
CMOS MASK ROM
Preliminary
TEST CONDITIONS
Item
Value
Input Pulse Levels
0.45V to 2.4V(at V
CC
=3.3V/3.0V)
0.4V to 2.2V (at V
CC
=2.5V)
10ns
1.5V (at V
CC
=3.3V/3.0V)
1.1V (at V
CC
=2.5V)
1 TTL Gate and C
L
=100pF
Input Rise and Fall Times
Input and Output timing Levels
Output Loads
AC CHARACTERISTICS
(V
CC
=3.3V/3.0V
±
0.3V, V
CC
=2.5V
±
0.2V, unless otherwise noted.)
READ CYCLE
Item
Symbol
V
CC
=3.3V
±
0.3V
Min
V
CC
=3.0V
±
0.3V
Min
V
CC
=2.5V
±
0.2V
Min
Unit
Max
Max
Max
Read Cycle Time
Chip Enable Access Time
Address Access Time
Page Access Time
Output Enable Access Time
Output or Chip Disable to
Output High-Z
t
RC
t
ACE
t
AA
t
PA
t
OE
80
100
120
ns
ns
ns
ns
ns
80
80
30
30
100
100
30
30
120
120
50
50
t
DF
20
20
20
ns
Output Hold from Address Change
t
OH
0
0
0
ns
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