參數(shù)資料
型號: KM23V4100D
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M位 (512Kx8 /256Kx16) CMOS掩膜ROM)
中文描述: 4分位(512Kx8 / 256Kx16)的CMOS掩模ROM(4分位(512Kx8 / 256Kx16)的CMOS掩膜光盤)
文件頁數(shù): 2/4頁
文件大?。?/td> 79K
代理商: KM23V4100D
KM23V4100D(G)
CMOS MASK ROM
ABSOLUTE MAXIMUM RATINGS
NOTE
: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be\ restricted to te
conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extendd periods may
affect device reliability.
Item
Symbol
Rating
Unit
Voltage on Any Pin Relative to V
SS
V
IN
-0.3 to +4.5
V
Temperature Under Bias
T
BIAS
-10 to +85
°
C
°
C
Storage Temperature
T
STG
-55 to +150
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to V
SS
, T
A
=0 to 70
°
C)
Item
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
CC
2.7/3.0
3.0/3.3
3.3/3.6
V
Supply Voltage
V
SS
0
0
0
V
CAPACITANCE
(T
A
=25
°
C, f=1.0MHz)
NOTE
: Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Conditions
MIN
Max
Unit
Output Capacitance
C
OUT
V
OUT
=0V
-
10
pF
Input Capacitance
C
IN
V
IN
=0V
-
10
pF
DC CHARACTERISTICS
NOTE
: Minimum DC Voltage(V
IL
) is -0.3V an input pins. During transitions, this level may undershoot to -2.0V for periods <20ns.
Maximum DC voltage on input pins(V
IH
) is V
CC
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
Parameter
Sym-
Test Conditions
Min
Max
Unit
Operating Current
I
CC
CE=OE=V
IL,
all outputs open
V
CC
=3.3
±
0.3V
V
CC
=3.0
±
0.3V
-
25
mA
-
20
mA
Standby Current(TTL)
I
SB1
CE=V
IH
, all outputs open
-
500
μ
A
μ
A
μ
A
μ
A
Standby Current(CMOS)
I
SB2
CE=V
CC
, all outputs open
-
30
Input Leakage Current
I
LI
V
IN
=0 to V
CC
-
10
Output Leakage Current
I
LO
V
OUT
=0 to V
CC
-
10
Input High Voltage, All Inputs
V
IH
2.0
V
CC
+0.3
V
Input Low Voltage, All Inputs
V
IL
-0.3
0.6
V
Output High Voltage Level
V
OH
I
OH
=-400
μ
A
2.4
-
V
Output Low Voltage Level
V
OL
I
OL
=2.1mA
-
0.4
V
MODE SELECTION
CE
OE
BHE
Q
15
/A
-1
Mode
Data
Power
H
X
X
X
Standby
High-Z
Standby
L
H
X
X
Operating
High-Z
Active
L
L
H
Output
Operating
Q
0
~Q
15
: Dout
Active
L
Input
Operating
Q
0
~Q
7
: Dout
Q
8
~Q
14
: Hi-Z
Active
相關(guān)PDF資料
PDF描述
KM23V4100DG 4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M位 (512Kx8 /256Kx16) CMOS掩膜ROM)
KM23V8100DT 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M位 (1Mx8 /512Kx16) CMOS掩膜ROM)
KM23V8100DET 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M位 (1Mx8 /512Kx16) CMOS掩膜ROM)
KM2520SRC03 SUBMINIATURE SOLID STATE LAMP
KM2520SGD03 SUBMICIATURE SOLID STATE LAMP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM23V8105D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
KM23V8105DG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
KM23V8105G 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
KM-23YC 制造商:KINGBRIGHT 制造商全稱:Kingbright Corporation 功能描述:SOT-23 SURFACE MOUNT LED LAMP
KM-23YC-F 制造商:Kingbright Corporation 功能描述: