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參數(shù)資料
| 型號： | KM416C256D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CMF-55 24M 5% T-0 EK E3 |
| 中文描述： | 256 × 16Bit的CMOS動(dòng)態(tài)RAM的快速頁面模式 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 83K |
| 代理商： | KM416C256D |
KM416C256D, KM416V256D
CMOS DRAM
This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells
within the same row. Power supply voltage (+5.0V or +3.3V), access time (-5,-6,-7), power consumption(Normal or Low power) and
package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and
Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 256Kx16 fast page mode DRAM family is
fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability.
It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
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Part Identification
- KM416C256D/DL (5V, 512K Ref.)
- KM416V256D/DL (3.3V, 512K Ref.)
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Fast Page Mode operation
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2 CAS Byte/Wrod Read/Write operation
ü
CAS-before-RAS refresh capability
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RAS-only and Hidden refresh capability
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Self-refresh capability (L-ver only)
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TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
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Early Write or output enable controlled write
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JEDEC Standard pinout
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Available in 40-pin SOJ 400mil and44(40)-pin
TSOP(II) 400mil packages
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Triple +5V
10% power supply(5V product)
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Triple +3.3V
0.3V power supply(3.3V product)
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Row Decoder
Column Decoder
Lower
Data out
Buffer
RAS
UCAS
LCAS
W
Vcc
Vss
DQ0
to
DQ7
A0
.
.
A8
Memory Array
262,144 x16
Cells
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
256K x 16Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
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Refresh Cycles
Part
NO.
V
CC
Refresh
cycle
Refresh period
Normal
L-ver
C256D
V256D
5V
3.3V
512K
8ms
128ms
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Performance Range:
Speed
-5
-6
-7
t
RAC
50ns
60ns
70ns
t
CAC
15ns
15ns
20ns
t
RC
90ns
10ns
130ns
t
PC
35ns
40ns
45ns
Remark
5V only
5V/3.3V
5V/3.3V
ü
Active Power Dissipation
Speed
-5
-6
-7
3.3V(512 Ref.)
-
325
290
5V(512 Ref.)
605
495
440
Unit : mW
S
Upper
Data in
Buffer
Upper
Data out
Buffer
Lower
Data in
Buffer
DQ
8
to
DQ15
OE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM416V256D | 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C4000C | RESISTOR |
| KM416C4100C | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C4004C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| KM416C4104C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416C256DT-6 | 制造商:Samsung Semiconductor 功能描述: |
| KM416C4000B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C4000C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C4004C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| KM416C4100B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
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