- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373155 > KM416C256D (SAMSUNG SEMICONDUCTOR CO. LTD.) CMF-55 24M 5% T-0 EK E3 PDF資料下載
參數(shù)資料
| 型號： | KM416C256D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CMF-55 24M 5% T-0 EK E3 |
| 中文描述： | 256 × 16Bit的CMOS動態(tài)RAM的快速頁面模式 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 83K |
| 代理商： | KM416C256D |
KM416C256D, KM416V256D
CMOS DRAM
AC CHARACTERISTICS
(Continued)
Parameter
Symbol
-5
-6
-7
Units
Notes
Min
Max
Min
Max
Min
Max
Data set-up time
t
DS
t
DH
t
REF
t
REF
t
CWD
t
RWD
t
AWD
t
CPWD
t
CSR
t
CHR
t
RPC
t
CPT
t
CPA
t
PC
t
PRWC
t
CP
t
RASP
t
RHCP
t
OEA
t
OED
t
OEZ
t
OEH
t
RASS
t
RPS
t
CHS
0
0
0
ns
9,19
Data hold time
10
10
15
ns
9,19
Refresh period (Normal)
8
8
8
ms
Refresh period (L-ver)
128
128
128
ms
CAS to W delay time
37
37
47
ns
7,14
RAS to W delay time
72
82
97
ns
7
Column address to W delay time
47
52
62
ns
7
CAS precharge to W delay time
52
57
67
ns
7
CAS set-up time (CAS -before-RAS refresh)
10
10
10
ns
17
CAS hlod time (CAS -before-RAS refresh)
10
10
10
ns
18
RAS to CAS precharge time
5
5
5
ns
CAS precharge time (CBR counter test cycle)
20
20
25
ns
Access time from CAS precharge
30
35
40
ns
3
Fast Page mode cycle time
35
40
45
ns
Fast Page read-modify-write cycle time
77
82
97
ns
CAS precharge time (Fast Page cycle)
10
10
10
ns
13
RAS pulse width (Fast Page cycle)
50
100K
60
100K
70
100K
ns
RAS hold time from CAS precharge
30
35
40
ns
OE access time
15
15
20
ns
OE to data delay
12
12
17
ns
Output buffer turn off delay time from OE
0
12
0
12
0
17
ns
6
OE command hold time
15
15
20
ns
RAS pulse width (C-B-R self refresh)
100
100
100
us
11
RAS precharge time (C-B-R self refresh)
90
110
130
ns
11
CAS hold time (C-B-R self refresh)
-50
-50
-50
ns
11
*1
Note)
*1 :
5V only
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM416V256D | 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C4000C | RESISTOR |
| KM416C4100C | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C4004C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| KM416C4104C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416C256DT-6 | 制造商:Samsung Semiconductor 功能描述: |
| KM416C4000B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C4000C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C4004C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| KM416C4100B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。