參數(shù)資料
型號(hào)： KM416L8031BT-G(L)Z
廠(chǎng)商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： DDR SDRAM Specification Version 1.0
中文描述： DDR SDRAM的規(guī)范版本1.0
文件頁(yè)數(shù)： 3/53頁(yè)
文件大?。?/td> 669K
代理商： KM416L8031BT-G(L)Z
- 3 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Revision History(continued)
Version 0.7 (March, 2000)
- Changed 128Mb spec from target to Preliminary version.
- Changed partnames as follows.
- Changed input cap. spec.
- Changed operating condition.
- Added Overshoot/Undershoot spec
. Vih(max) = 4.2V, the overshoot voltage duration is
≤
3ns at VDD.
. Vil(min) =- 1.5V, the overshoot voltage duration is
≤
3ns at VSS.
- Changed AC parameters as follows.
- Added DC spec values.
Version 0.71 (April, 2000)
- Corrected a typo for tRAS at 133Mhz/CL2.5 from 48ns t0 45ns.
- Corrected a typo in "General Information" table from 64Mx4 to 8Mx16.
Version 0.72(May,2000)
-
Changed DC spec item & test condition
Version 0.73(June,2000)
-
Added updated DC spec values
-
Deleted tDAL in AC parameter
Version 1.0(November,2000)
-
Eliminate "preliminary"
from
to
KM44L32031BT-G(L)Z/Y/0
K4H280438B-TC(L)A2/B0/A0
KM48L16031BT-G(L)Z/Y/0
K4H280838B-TC(L)A2/B0/A0
KM416L8031BT-G(L)Z/Y/0
K4H281638B-TC(L)A2/B0/A0
from
to
CK/CK
2.5pF ~ 3.5pF
2.0pF ~ 3.0pF w/ Delta Cin = 0.25pF
DQ/DQS/DM
4.0pF ~ 5.5pF
4.0pF ~ 5.0pF w/ Delta Cin = 0.5pF
CMD/Addr
2.5pF ~ 3.5pF
2.0pF ~ 3.0pF with Delta Cin = 0.5pF
from
to
Vil/Vih(ac)
Vref +/- 0.35V
Vref +/- 0.31V
V
IL
/V
IH
(dc)
Vref +/- 0.18V
Vref +/- 0.15V
from
to
Comments
tDQSQ
+/- 0.5(PC266), +/- 0.6(PC200)
+0.5(PC266), +0.6(PC200)
tDV
+/- 0.35tCK
-
Removed
tQH
-
tHPmin - 0.75ns(PC266)
New Definition
tHPmin - 1.0ns(PC200)
tHP
-
tCLmin or tCHmin
New Definition
相關(guān)PDF資料
PDF描述
KM44L32031BT-G(F)0 DDR SDRAM Specification Version 0.61
KM48L16031BT-G(F)0 DDR SDRAM Specification Version 0.61
KM416L8031BT-G(F)0 DDR SDRAM Specification Version 0.61
KM44L32031BT-G(F)Y DDR SDRAM Specification Version 0.61
KM48L16031BT-G(F)Y DDR SDRAM Specification Version 0.61
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM416L8031BT-GLZ/Y/0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:DDR SDRAM Specification Version 1.0
KM416RD16AC 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD16AD 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD16C 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD16D 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
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