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參數(shù)資料
| 型號(hào)： | KM44C1000D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 100萬(wàn)的CMOS x 4位動(dòng)態(tài)隨機(jī)存儲(chǔ)器和快速頁(yè)面模式 |
| 文件頁(yè)數(shù)： | 3/21頁(yè) |
| 文件大?。?/td> | 372K |
| 代理商： | KM44C1000D |
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KM44C1000D, KM44V1000D
CMOS DRAM
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Parameter
Symbol
Rating
Units
3.3V
5V
Voltage on any pin relative to V
SS
V
IN,
V
OUT
-0.5 to +4.6
-1 to +7.0
V
Voltage on V
CC
supply relative to V
SS
V
CC
-0.5 to +4.6
-1 to +7.0
V
Storage Temperature
Tstg
-55 to +150
-55 to +150
°
C
Power Dissipation
P
D
600
600
mW
Short Circuit Output Current
I
OS
50
50
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to Vss, T
A
= 0 to 70
°
C)
*1 : V
CC
+1.3V/15ns(3.3V), V
CC
+2.0V/20ns(5V), Pulse width is measured at V
CC
*2 : -
1.3V/15ns(3.3V), -
2.0V/20ns(5V), Pulse width is measured at V
SS
Parameter
Symbol
3.3V
5V
Units
Min
Typ
Max
Min
Typ
Max
Supply Voltage
V
CC
3.0
3.3
3.6
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
0
0
0
V
Input High Voltage
V
IH
2.0
-
V
CC
+0.3
*1
0.8
2.4
-
V
CC
+1.0
*1
0.8
V
Input Low Voltage
V
IL
-0.3
*2
-
-0.1
*2
-
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
Parameter
Symbol
Min
Max
Units
3.3V
Input Leakage Current (Any input 0
≤
V
IN
≤
V
CC
+0.3V,
all other input pins not under test=0 Volt)
I
I(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤
V
OUT
≤
V
CC
)
I
O(L)
-5
5
uA
Output High Voltage Level(I
OH
=-2mA)
V
OH
2.4
-
V
Output Low Voltage Level(I
OL
=2mA)
V
OL
-
0.4
V
5V
Input Leakage Current (Any input 0
≤
V
IN
≤
V
CC
+0.5V,
all other input pins not under test=0 Volt)
I
I(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤
V
OUT
≤
V
CC
)
I
O(L)
-5
5
uA
Output High Voltage Level(I
OH
=-5mA)
V
OH
2.4
-
V
Output Low Voltage Level(I
OL
=4.2mA)
V
OL
-
0.4
V
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| KM44C1000DJ6 | 制造商:SAMSUNG 功能描述:* |
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| KM44C16100B | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Fast Page Mode |
| KM44C256A | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44C256A-10 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode |
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