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參數(shù)資料
| 型號(hào)： | KM44C1000D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 100萬的CMOS x 4位動(dòng)態(tài)隨機(jī)存儲(chǔ)器和快速頁面模式 |
| 文件頁數(shù)： | 4/21頁 |
| 文件大?。?/td> | 372K |
| 代理商： | KM44C1000D |
KM44C1000D, KM44V1000D
CMOS DRAM
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
I
CC6
and I
CC7,
address can be changed maximum once while RAS=V
IL
. In
I
CC4
, address can be changed maximum once within one fast page mode cycle time,
t
PC
.
DC AND OPERATING CHARACTERISTICS
(Recommend operating conditions unless otherwise noted.)
I
CC1
* : Operating Current (RAS and CAS cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (CAS=V
IH
, RAS, Address cycling @
t
RC
=min.)
I
CC4
* : Fast Page Mode Current (RAS=V
IL
, CAS, Address cycling @
t
PC
=min.)
I
CC5
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @
t
RC
=min)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, CAS=0.2V,
DQ=Don
′
t Care, T
RC
=125us(L-ver.), T
RAS
=T
RAS
min~300ns
I
CCS
: Self refresh current
RAS=CAS=V
IL
, W=OE =A0 ~ A9=V
CC-
0.2V or 0.2V
DQ0 ~ DQ3=V
CC-
0.2V, 0.2V or OPEN
Symbol
Power
Speed
Max
Units
KM44V1000D
KM44C1000D
I
CC1
Don
′
t Care
-5
-6
-7
-
60
55
85
75
65
mA
mA
mA
I
CC2
Don
′
t Care
Don
′
t Care
1
2
mA
I
CC3
Don
′
t Care
-5
-6
-7
-
60
55
85
75
65
mA
mA
mA
I
CC4
Don
′
t Care
-5
-6
-7
-
45
40
65
55
45
mA
mA
mA
I
CC5
Normal
L
Don
′
t Care
0.5
100
1
200
mA
uA
I
CC6
Don
′
t Care
-5
-6
-7
-
60
55
85
75
65
mA
mA
mA
I
CC7
L
Don
′
t Care
200
300
uA
I
CCS
L
Don
′
t Care
150
-
uA
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|---|---|
| KM44C16000B | 16M x 4bit CMOS Dynamic RAM with Fast Page Mode |
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| KM44V4000C | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode(4M x 4位 CMOS 動(dòng)態(tài)RAM(帶快速頁模式)) |
| KM44V4100C | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode(4M x 4位 CMOS 動(dòng)態(tài)RAM(帶快速頁模式)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM44C1000DJ6 | 制造商:SAMSUNG 功能描述:* |
| KM44C16000B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Fast Page Mode |
| KM44C16100B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Fast Page Mode |
| KM44C256A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44C256A-10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode |
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