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參數(shù)資料
| 型號： | KM44S32030BT-FL0 |
| 元件分類： | DRAM |
| 英文描述： | 32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| 封裝： | 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 135K |
| 代理商： | KM44S32030BT-FL0 |
KM44S32030B
CMOS SDRAM
Rev. 0.1 Jun. 1999
DC CHARACTERISTICS
1. Measured with outputs open.
2. Refresh period is 64ms.
3. KM44S32030BT-G**
4. KM44S32030BT-F**
5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)
Notes :
(Recommended operating condition unless otherwise noted, TA = 0 to 70
°C)
Parameter
Symbol
Test Condition
Version
Unit
Note
-A
-8
-H
-L
-10
Operating current
(One bank active)
ICC1
Burst length = 1
tRC
≥ tRC(min)
IO = 0 mA
120
110
mA
1
Precharge standby current in
power-down mode
ICC2P
CKE
≤ VIL(max), tCC = 10ns
1
mA
ICC2PS CKE & CLK
≤ VIL(max), tCC = ∞
1
Precharge standby current in
non power-down mode
ICC2N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
20
mA
ICC2NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
7
Active standby current in
power-down mode
ICC3P
CKE
≤ VIL(max), tCC = 10ns
5
mA
ICC3PS CKE & CLK
≤ VIL(max), tCC = ∞
5
Active standby current in
non power-down mode
(One bank active)
ICC3N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
30
mA
ICC3NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
20
mA
Operating current
(Burst mode)
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
140
135
115
mA
1
Refresh current
ICC5
tRC
≥ tRC(min)
220
210
mA
2
Self refresh current
ICC6
CKE
≤ 0.2V
G
1.5
mA
3
F
800
uA
4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM44S32030BT-G/F10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| KM44S32030BT-G/F8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| KM44S32030BT-G/FA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| KM44S32030BT-G/FH | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| KM44S32030BT-G/FL | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
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