- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373158 > KM616FR4010 (SAMSUNG SEMICONDUCTOR CO. LTD.) 256K x 16 Bit Low Power and Low Voltage Full CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài)RAM) PDF資料下載
參數(shù)資料
| 型號： | KM616FR4010 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K x 16 Bit Low Power and Low Voltage Full CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài)RAM) |
| 中文描述： | 256K × 16位低功耗和低電壓的CMOS全靜態(tài)RAM（256K × 16位低功耗低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 160K |
| 代理商： | KM616FR4010 |
Revision 0.11
June 1998
CMOS SRAM
KM616FR4010 Family
Advance
- 2 -
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
Product Family
Operating Temperature
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Typ.)
Operating
(I
CC1
, Max)
KM616FR4010
Industrial(-40 ~ 85
°
C)
1.7 ~ 2.2V
85
1)
/100
0.5
μ
A
3mA
48-CSP
256K x 16 bit Low Power and Low Voltage Full CMOS Static RAM
GENERAL DESCRIPTION
The KM616FR4010 families are fabricated by SAMSUNG
′
s
advanced full CMOS process technology. The family supports
industrial temperature range and 48 ball Chip Scale Package
for user flexibility of system design. The family also supports
low data retention voltage for battery back-up operation with
low data retention current.
FEATURES
Process Technology : Full CMOS
Organization : 256K x16 bit
Power Supply Voltage : 1.7 ~ 2.2V
Low Data Retention Voltage : 1.0V(Min)
Three state output status and TTL Compatible
Package Type : 48 - CSP with 0.75mm ball pitch
PIN DESCRIPTION
Name
Function
Name
Function
CS
Chip Select Input
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
UB
Upper Byte(I/O
9
~
16
)
A
0
~A
17
Address Inputs
LB
Lower Byte(I/O
1
~
8
)
I/O
1
~I/O
16
Data Inputs/Outputs
N.C.
No Connection
FUNCTIONAL BLOCK DIAGRAM
48-ball CSP - Top View (Ball Down)
LB
OE
A0
A1
A2
N.C
I/O9
UB
A3
A4
CS
I/O1
I/O10
I/O11
A5
A6
I/O2
I/O3
Vss
I/O12
A17
A7
I/O4
Vcc
Vcc
I/O13
N.C
A16
I/O5
Vss
I/O15
I/O14
A14
A15
I/O6
I/O7
I/O16
N.C
A12
A13
WE
I/O8
N.C
A8
A9
A10
A11
N.C
1
2
3
4
5
6
A
B
C
D
E
F
G
H
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice
.
Precharge circuit.
Memory array
2048 rows
128
×
16 columns
I/O Circuit
Column select
Clk gen.
Row
select
WE
OE
UB
CS
I/O
1
~I/O
8
Data
cont
Data
cont
Data
cont
LB
I/O
9
~I/O
16
Vcc
Vss
Row
Addresses
Control Logic
Column Addresses
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM616FS1000Z | 64K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
| KM616FR1000Z | 64K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
| KM616FS1010Z | 64K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
| KM616FR1010Z | 64K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
| KM616FS2000Z | 128K x 16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 16位超低功耗低電壓CMOS 靜態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM6-16S-10PN | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM6-16S-10PN-MK2 | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM6-16S-10SN | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM6-16S-10SN-MK2 | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
| KM6-16S-10SY | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。