參數(shù)資料
型號: KM616FR4010
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256K x 16 Bit Low Power and Low Voltage Full CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài)RAM)
中文描述: 256K × 16位低功耗和低電壓的CMOS全靜態(tài)RAM(256K × 16位低功耗低電壓的CMOS靜態(tài)RAM)的
文件頁數(shù): 4/9頁
文件大?。?/td> 160K
代理商: KM616FR4010
Revision 0.11
June 1998
CMOS SRAM
KM616FR4010 Family
Advance
- 4 -
DC AND OPERATING CHARACTERISTICS
1. Super low power product=2
μ
A with special handling.
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
μ
A
Output leakage current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL
, V
IO
=Vss to Vcc
-1
-
1
Operating power supply current
I
CC
I
IO
=0mA, CS=V
IL
, V
IN
=V
IH
or V
IL
-
-
2
mA
Average operating current
I
CC1
Cycle time=1
μ
s, 100%duty,
I
IO
=0mA,
CS
0.2V, V
IN
0.2V or V
IN
V
CC
-0.2V
-
-
3
mA
I
CC2
Cycle time=Min, I
IO
=0mA
,
100% duty,
CS=V
IL,
V
IN
=V
IH
or V
IL
-
-
25
mA
Output low voltage
V
OL
I
OL
= 0.1mA
-
-
0.2
V
Output high voltage
V
OH
I
OL
= -0.1mA
1.6
-
-
V
Standby Current(TTL)
I
SB
CS=V
IH
or LB=UB=V
IH
, Other inputs=V
IH
or V
IL
-
-
0.3
mA
Standby Current (CMOS)
I
SB1
CS
Vcc-0.2V or LB=UB
Vcc-0.2V,
CS
0.2V, Other inputs=0~Vcc
-
0.5
5
1)
μ
A
RECOMMENDED DC OPERATING CONDITIONS
1)
Note :
1. Industrial Product : T
A
=-40 to 85
°
C, otherwise specified
2.Overshoot : Vcc + 1.0 V in case of pulse width
20ns
3.Undershoot : -1.0 V in case of pulse width
20ns
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
1.7
1.8/2.0
2.2
V
Ground
Vss
0
0
0
V
Input high voltage
V
IH
1.4
-
Vcc+0.2
2)
V
Input low voltage
V
IL
-0.2
3)
-
0.4
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
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