參數(shù)資料
型號(hào)： KM616U4000B
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
中文描述： 256K × 16位低功耗和低電壓的CMOS靜態(tài)RAM（256K × 16位低功耗低電壓的CMOS靜態(tài)RAM）的
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 134K
代理商： KM616U4000B
KM616V4000B, KM616U4000B Family
CMOS SRAM
Revision 3.01
January 1998
2
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
GENERAL DESCRIPTION
The KM616V4000B and KM616U4000B families are fabricated
by SAMSUNG
′
s advanced CMOS process technology. The
families support various operating temperature range and have
small package types for user flexibility of system design. The
families also support low data retention voltage for battery
back-up operation with low data retention current.
FEATURES
Process Technology : TFT
Organization : 256K x16
Power Supply Voltage
KM68V4000B Family : 3.0~3.6V
KM68U4000B Family : 2.7~3.3V
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type : 44-TSOP2-400F/R
PIN DESCRIPTION
Name
Function
Name
Function
CS
Chip Select Input
LB
Lower Byte (I/O
1~8
)
OE
Output Enable Input
UB
Upper Byte(I/O
9~16
)
WE
Write Enable Input
Vcc
Power
A
0
~A
17
Address Inputs
Vss
Ground
I/O
1
~I/O
16
Data Inputs/Outputs
N.C
No Connection
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
Product
List
Operating
Temperature
Vcc
Range
Speed
(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
15
μ
A
20
μ
A
Operating
(I
CC2
)
KM616V4000BL-L
KM616V4000BLI-L
Commercial(0~70
°
C)
Industrial(-40~85
°
C)
3.0~3.6V
70
1)
/85
1)
60mA
44-TSOP2-F/R
3.0~3.6V
85
1)
/100
KM616U4000BL-L
KM616U4000BLI-L
Commercial(0~70
°
C)
Industrial(-40~85
°
C)
2.7~3.3V
85
1)
/100
15
μ
A
20
μ
A
2.7~3.3V
85
1)
/100
A4
A3
A2
A1
A0
CS
I/O1
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
44-TSOP2
Forward
44-TSOP2
Reverse
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A12
A12
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Row
select
A8 A9 A10 A5 A6
A4
A7
A13
A14
A0
A1
A15
A16
A17
A2
I/O
1
~I/O
8
A3
Data
cont
Data
cont
Data
cont
I/O
9
~I/O
16
Vcc
Vss
A4
A12
Precharge circuit.
Memory array
1024 rows
256
×
16 columns
I/O Circuit
Column select
WE
OE
UB
CS
LB
Control
logic
相關(guān)PDF資料
PDF描述
KM616V4000B 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
KM616U4000C 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
KM616V4000C 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
KM616U4010C 256Kx16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
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