參數(shù)資料
型號： KM616V1000B
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 64K x16 Bit Low Power and Low Voltage Full CMOS Static RAM(64K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
中文描述： 64K的x16位低功耗和低電壓的CMOS全靜態(tài)RAM（64K的× 16位低功耗低電壓的CMOS靜態(tài)RAM）的
文件頁數(shù)： 2/9頁
文件大?。?/td> 135K
代理商： KM616V1000B
KM616V1000B, KM616U1000B Family
CMOS SRAM
Revision 2.0
February 1998
2
64K x16 bit Low Power and Low Voltage CMOS Static RAM
GENERAL DESCRIPTION
The KM616V1000B and KM616U1000B families are fabri-
cated by SAMSUNG
′
s advanced CMOS process technology.
The families support various operating temperature ranges
and have small package types for user flexibility of system
design. The families also support low data retention voltage
for battery back-up operation with low data retention current.
FEATURES
Process Technology : Poly Load
Organization : 64K x16
Data Byte Control : LB=I/O
1
~
8
, UB=I/O
9
~
16
Power Supply Voltage :
KM616V1000B family : 3.0~3.6V
KM616U1000B family : 2.7~3.3V
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type :44-TSOP2-400F/R
PIN DESCRIPTION
Name
Function
Name
Function
CS
Chip Select Input
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
I/O
1
~
16
Data Inputs/Outputs
LB
Lower Byte (I/O
1~8
)
A
0
~A
15
Address Inputs
UB
Upper Byte(I/O
9~16
)
N.C
No Connection
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
Product Family
Operating Temperature
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(Icc
2
, Max
)
KM616V1000BL-L
KM616U1000BL-L
KM616V1000BLI-L
KM616U1000BLI-L
Commercial(0~70
°
C)
3.0~3.6V
2.7~3.3V
3.0~3.6V
2.7~3.3V
70
1)
100
85
1)
100
15
μ
A
15
μ
A
20
μ
A
20
μ
A
65mA
44-TSOP2
Forward/Reverse
Industrial(-40~85
°
C)
FUNCTIONAL BLOCK DIAGRAM
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A15
A14
A13
A12
N.C
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
N.C
44-TSOP2
Forward
44-TSOP2
Reverse
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A15
A14
A13
A12
N.C
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
N.C
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice
.
Precharge circuit.
Memory array
1024 rows
64
×
16 columns
I/O Circuit
Column select
Clk gen.
Row
select
A9 A10 A11 A12 A13 A14
A0
A1
A2
A3
A4
A5
A6
A7
WE
OE
UB
LB
CS
I/O
1
~I/O
8
A8
Data
cont
Data
cont
Data
cont
I/O
9
~I/O
16
Vcc
Vss
A15
Control
logic
相關PDF資料
PDF描述
KM616U2000 128K x16 Bit Low Power and Low Voltage Full CMOS Static RAM(128K x 16位低功耗低電壓CMOS 靜態(tài)RAM)
KM616U4000BZ 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
KM616V4000BZ 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
KM616U4000B 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
KM616V4000B 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM)
相關代理商/技術參數(shù)
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