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參數(shù)資料
| 型號(hào)： | KM616V1000B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64K x16 Bit Low Power and Low Voltage Full CMOS Static RAM(64K x 16位低功耗低電壓CMOS 靜態(tài) RAM) |
| 中文描述： | 64K的x16位低功耗和低電壓的CMOS全靜態(tài)RAM（64K的× 16位低功耗低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 135K |
| 代理商： | KM616V1000B |
KM616V1000B, KM616U1000B Family
CMOS SRAM
Revision 2.0
February 1998
3
PRODUCT LIST
Commercial Temperature Products(0~70
°
C)
Part Name
KM616V1000BLT-7L
KM616U1000BLT-10L
Industrial Temperature Products(-40~85
°
C)
Part Name
KM616V1000BLTI-8L
KM616U1000BLTI-10L
Function
Function
KM616V1000BLR-7L
KM616U1000BLR-10L
44-TSOP-2F, 3.3V, 70ns, LL
44-TSOP-2F, 3.0V, 100ns, LL
44-TSOP-2R, 3.3V, 70ns, LL
44-TSOP-2R, 3.0V, 100ns, LL
KM616V1000BLRI-8L
KM616U1000BLRI-10L
44-TSOP-2F, 3.3V, 85ns, LL
44-TSOP-2F, 3.0V, 100ns, LL
44-TSOP-2R, 3.3V, 85ns, LL
44-TSOP-2R, 3.0V, 100ns, LL
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
V
IN
,V
OUT
-0.5 to Vcc+0.5
V
-
Voltage on Vcc supply relative to Vss
V
CC
-0.5 to 4.6
V
-
Power Dissipation
P
D
1.0
W
-
Storage temperature
T
STG
-65 to 150
°
C
-
Operating Temperature
T
A
0 to 70
°
C
KM616V1000BL-L
KM616U1000BL-L
KM616V1000BLI-L
KM616U1000BLI-L
-
-40 to 85
°
C
Soldering temperature and time
T
SOLDER
260
°
C, 10sec (Lead Only)
-
FUNCTIONAL DESCRIPTION
1. X means don
′
t care. (Must be in low or high state)
CS
OE
WE
LB
UB
I/O
1~8
I/O
9~16
Mode
Power
H
X
1)
X
1)
X
1)
X
1)
High-Z
High-Z
Deselected
Standby
L
H
H
X
1)
X
1)
High-Z
High-Z
Output Disabled
Active
L
X
1)
X
1)
H
H
High-Z
High-Z
Output Disabled
Active
L
L
H
L
H
Dout
High-Z
Lower Byte Read
Active
L
L
H
H
L
High-Z
Dout
Upper Byte Read
Active
L
L
H
L
L
Dout
Dout
Word Read
Active
L
X
1)
L
L
H
Din
High-Z
Lower Byte Write
Active
L
X
1)
L
H
L
High-Z
Din
Upper Byte Write
Active
L
X
1)
L
L
L
Din
Din
Word Write
Active
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM616U2000 | 128K x16 Bit Low Power and Low Voltage Full CMOS Static RAM(128K x 16位低功耗低電壓CMOS 靜態(tài)RAM) |
| KM616U4000BZ | 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM) |
| KM616V4000BZ | 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM) |
| KM616U4000B | 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM) |
| KM616V4000B | 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM616V1000BLTI-7L | 制造商:Samsung Semiconductor 功能描述: |
| KM616V1002AT-12 | 制造商:Samsung Electro-Mechanics 功能描述:Static RAM, 64Kx16, 44 Pin, Plastic, TSOP 制造商:SEC 功能描述:Static RAM, 64Kx16, 44 Pin, Plastic, TSOP |
| KM616V1002AT-15 | 制造商:SEC 功能描述:Static RAM, 64Kx16, 44 Pin, Plastic, TSOP |
| KM616V1002BT-10 | 制造商:SEC 功能描述: |
| KM616V4002BT15 | 制造商:SAMSUNG 功能描述:* |
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