參數(shù)資料
型號(hào)： KM68FR1000
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM)
中文描述： 128K的x8位超低功耗和低電壓的CMOS全靜態(tài)RAM（128K的× 8位超低功耗和低電壓的CMOS靜態(tài)RAM）的
文件頁數(shù)： 4/11頁
文件大?。?/td> 207K
代理商： KM68FR1000
Revision 3.0
July 1998
CMOS SRAM
KM68FV1000, KM68FS1000, KM68FR1000 Family
4
RECOMMENDED DC OPERATING CONDITIONS
1)
Note
1 Commercial Product : T
A
=0 to 70
°
C, unless otherwise specified
Industrial Product : T
A
=-40 to 85
°
C, unless otherwise specified
2. Overshoot : Vcc + 1.0V in case of pulse width
≤
20ns
3. Undershoot : -1.0V in case of pulse width
≤
20ns
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Product
Min
Typ
Max
Unit
Supply voltage
Vcc
KM68FV1000 Family
3.0
3.3
3.6
V
KM68FS1000 Family
2.3
2.5/3.0
3.3
KM68FR1000 Family
1.8
2.0/2.5
2.7
Ground
Vss
All Family
0
0
0
V
Input high voltage
V
IH
KM68FV1000 Family
Vcc=3.3
±
0.3V
2.2
-
Vcc+0.2
2)
V
KM68FS1000 Family
Vcc=3.0
±
0.3V
Vcc=2.5
±
0.2V
Vcc=2.5
±
0.2V
Vcc=2.0
±
0.2V
2.2
2.0
KM68FR1000 Family
2.0
1.6
Input low voltage
V
IL
All Family
-0.2
3)
-
0.4
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
DC AND OPERATING CHARACTERISTICS
1. KM68FV1000 Family = 40mA
2. Super low power product = 1
μ
A with special handling.
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
μ
A
Output leakage current
I
LO
CS
1
=V
IH
or CS
2
=V
IL
or
OE=V
IH
or
WE=V
IL,
V
IO
=Vss to Vcc
-1
-
1
Operating power supply current
I
CC
I
IO
=0mA, CS
1
=V
IL
, CS
2
=V
IH
, V
IN
=V
IL
or V
IH
, Read
-
-
2
mA
Average operating current
I
CC1
Cycle time=1
μ
s
, 100% duty, I
IO
=0mA, CS
1
≤
0.2V,
CS
2
≥
V
CC
-0.2V, V
IN
≤
0.2V or V
IN
≥
V
CC
-0.2V
Read
-
-
3
mA
Write
-
10
15
I
CC2
Cycle time=Min, 100% duty, I
IO
=0mA,
CS
1
=V
IL
, CS
2
=V
IH,
V
IN
=V
IL
or V
IH
Vcc=3.3V@70ns
-
-
35
1)
mA
Vcc=2.7V@120ns
-
-
30
Vcc=2.2V@300ns
-
-
15
Output low voltage
V
OL
I
OL
2.1mA at Vcc=3.0/3.3V
-
-
0.4
V
0.5mA at Vcc=2.5V
0.33mA at Vcc=2.0V
Output high voltage
V
OH
I
OH
-1.0mA at Vcc=3.0/3.3V
2.4
-
-
V
-0.5mA at Vcc=2.5V
2.0
-
-
-0.44mA at Vcc=2.0V
1.6
-
-
Standby Current(TTL)
I
SB
CS
1
=V
IH
or
CS
2
=V
IL,
Other inputs=V
IL
or V
IH
-
-
0.3
mA
Standby Current(CMOS)
I
SB1
CS
1
≥
Vcc-0.2V, CS
2
≥
Vcc-0.2V or CS
2
≤
0.2V, Other inputs=0~Vcc
-
-
5
1)
μ
A
相關(guān)PDF資料
PDF描述
KM68FS1000 128K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM)
KM68FV1000 128K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM)
KM68FR2000 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM)
KM68FS2000 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM)
KM68FV2000 256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 8位超低功耗和低電壓CMOS 靜態(tài) RAM)
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