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參數(shù)資料
| 型號： | KM68U2000 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低電壓CMOS 靜態(tài) RAM) |
| 中文描述： | 256Kx8位低功耗和低電壓的CMOS靜態(tài)RAM（256K × 8位低功耗和低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 131K |
| 代理商： | KM68U2000 |
CMOS SRAM
KM68V2000, KM68U2000 Family
Revision 1.0
November 1997
256Kx8 bit Low Power and Low Voltage CMOS Static RAM
GENERAL DESCRIPTION
The KM68V2000 and KM68U2000 families are fabricated by
SAMSUNG
′
s advanced CMOS process technology. The
families support various operating temperature ranges and
have various package types for user flexibility of system
design. The families also support low data retention voltage
for battery back-up operation with low data retention current.
FEATURES
Process Technology : TFT
Organization : 256Kx8
Power Supply Voltage
KM68V2000 Family : 3.0V ~ 3.6V
KM68U2000 Family : 2.7V ~ 3.3V
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type :32-TSOP1-0820F, 32-TSOP1-0813.4F
PIN DESCRIPTION
Name
Function
CS
1
,CS
2
Chip Select Input
OE
Output Enable Input
WE
Write Enable Input
A
0
~A
17
Address Inputs
I/O
1
~I/O
8
Data Inputs/Outputs
Vcc
Power
Vss
Ground
N.C.
No Connection
PRODUCT FAMILY
1. KM68V2000 family = 50mA
Product Family
Operating Temp.
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(I
CC2,
Max)
KM68V2000L-L
Commercial
(0~70
°
C)
3.0~3.6V
70/85
10
μ
A
40mA
1)
32-TSOP1-F
32-sTSOP1-F
KM68U2000L-L
2.7~3.3V
85/100
KM68V2000LI-L
Industrial
(-40~85
°
C)
3.0~3.6V
85/100
15
μ
A
KM68U2000LI-L
2.7~3.3V
85/100
FUNCTIONAL BLOCK DIAGRAM
A11
A9
A8
A13
WE
CS2
A15
VCC
A17
A16
A14
A12
A7
A6
A5
A4
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
32-sTSOP1
Type - Forward
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-TSOP
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
A12
Precharge circuit.
Memory array
1024 rows
256
×
8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A0
A1 A2 A4 A5
A7
A6
A3
A8
A9
A10
A11
A13
A15
I/O
1
Data
cont
Data
cont
I/O
8
A14
A16
A17
CS
1
WE
OE
CS
2
Control
logic
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM68V2000 | 256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低電壓CMOS 靜態(tài) RAM) |
| KM68U4000A | 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM) |
| KM68V4000A | 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM) |
| KM68U4000B | 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM) |
| KM68V4000B | 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM68V1000B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BL | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BL/L-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BLE | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BLE/LE-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
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