參數(shù)資料
型號: KM68U4000A
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM)
中文描述: 為512k x8位低功耗和低電壓的CMOS靜態(tài)RAM(為512k x8位低功耗低電壓的CMOS靜態(tài)RAM)的
文件頁數(shù): 1/9頁
文件大?。?/td> 140K
代理商: KM68U4000A
KM68V4000A, KM68U4000A Family
CMOS SRAM
Revision 2.0
February 1998
1
Document Title
512K x8 bit Low Power and Low Voltage CMOS Static RAM
Revision History
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Revision No.
0.0
0.1
0.2
1.0
2.0
Remark
Advance
Preliminary
Preliminary
Final
Final
History
Initial Draft
Revise
- Speed bin=70/85/100ns at Vcc=3.3V
Revise
- Seperate read and write for I
CC1
, I
CC2
: I
CC1
= I
CC2
Read=10mA and Write=20mA at Vcc=3.3V
- One datasheet for commercial and industrial product.
Finalize
- Add 85ns with 30pF part in 3.3V product.
Revise
- Change datasheet format
- Remove 70/100ns part from KM68V4000A Family
- Remove 70ns part form KM68U4000A Family
Draft Date
August 16, 1994
December 22, 1994
April 15, 1996
September 19, 1996
February 25, 1998
相關(guān)PDF資料
PDF描述
KM68V4000A 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM)
KM68U4000B 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM)
KM68V4000B 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM)
KM68U4000C 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM)
KM68V4000C 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM)
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