參數(shù)資料
型號： KM68V4000C
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM)
中文描述： 為512k x8位低功耗和低電壓的CMOS靜態(tài)RAM（為512k x8位低功耗低電壓的CMOS靜態(tài)RAM）的
文件頁數(shù)： 1/10頁
文件大?。?/td> 174K
代理商： KM68V4000C
KM68V4000C, KM68U4000C Family
Preliminary
CMOS SRAM
Revision 0.1
June 1998
1
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No.
0.0
0.1
Remark
Advance
Preliminary
History
Initial Draft
Revisied
- Speed bin change
KM68U4000C : 85/100ns
→
70/85/100ns
- DC Characteristics change
I
CC
: 5mA at read/write
→
4mA at read
I
CC1
: 3mA
→
4mA
I
CC2
: 35mA
→
30mA
I
SB
: 0.5mA
→
0.3mA
I
SB1
: 10
μ
A
→
15
μ
A for commercial parts
- Add 32-TSOP1-0820
Draft Data
January 13, 1998
June 12, 1998
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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