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參數(shù)資料
| 型號(hào)： | KM68V2000 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低電壓CMOS 靜態(tài) RAM) |
| 中文描述： | 256Kx8位低功耗和低電壓的CMOS靜態(tài)RAM（256K × 8位低功耗和低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大小： | 131K |
| 代理商： | KM68V2000 |
CMOS SRAM
KM68V2000, KM68U2000 Family
Revision 1.0
November 1997
Address
Data Out
Previous Data Valid
Data Valid
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS
1
=OE=V
IL
, WE=V
IH
)
t
AA
t
RC
t
OH
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
Data Valid
High-Z
CS
1
Address
OE
Data ou
t
NOTES
(READ CYCLE)
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
CS
2
t
OH
t
AA
t
OLZ
t
LZ
t
OHZ
t
HZ(1,2)
t
RC
t
CO2
t
OE
t
CO1
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| KM68U4000A | 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM) |
| KM68V4000A | 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM) |
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| KM68U4000C | 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM68V2000ALTGI-7L | 制造商:Samsung Electro-Mechanics 功能描述:256K X 8 STANDARD SRAM, 70 ns, PDSO32 |
| KM68V257C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 Bit High Speed Static RAM(3.3V Operating), Evolutionary Pin out. |
| KM68V257C-15 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 Bit High Speed Static RAM(3.3V Operating), Evolutionary Pin out. |
| KM68V257C-17 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 Bit High Speed Static RAM(3.3V Operating), Evolutionary Pin out. |
| KM68V257E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating) |
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