參數(shù)資料
型號： KM68V4000B
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM)
中文描述： 為512k x8位低功耗和低電壓的CMOS靜態(tài)RAM（為512k x8位低功耗低電壓的CMOS靜態(tài)RAM）的
文件頁數(shù)： 2/9頁
文件大?。?/td> 132K
代理商： KM68V4000B
KM68V4000B, KM68U4000B Family
512K
×
8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision 2.0
February 1998
2
GENERAL DESCRIPTION
The KM68V4000B and KM68U4000B families are fabricated
by SAMSUNG
′
s advanced CMOS process technology. The
families support various operating temperature range and have
various package type for user flexibility of system design. The
families also support low data retention voltage for battery
back-up operation with low data retention current.
FEATURES
Process Technology : TFT
Organization : 512K
×
8
Power Supply Voltage
KM68V4000B Family : 3.0~3.6V
KM68U4000B Family : 2.7~3.3V
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type : 32-SOP, 32-TSOP2-400F/R
PIN DESCRIPTION
Name
Function
Name
Function
CS
Chip Select Input
I/O
1
~I/O
8
Data Inputs/Outputs
OE
Output Enable Input
Vcc
Power
WE
Write Enable Input
Vss
Ground
A
0
~A
18
Address Inputs
PRODUCT FAMILY
1. The paramerter is measured with 30pF test load.
Product Family
Operating Temperature
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
15
μ
A
20
μ
A
15
μ
A
20
μ
A
Operating
(I
CC2
)
KM68V4000BL-L
Commercial(0~70
°
C)
Industrial(-40~85
°
C)
Commercial(0~70
°
C)
Industrial(-40~85
°
C)
3.0~3.6V
70
1)
/85
1)
/100
45mA
32-SOP
32-TSOP2-F/R
KM68V4000BLI-L
3.0~3.6V
85
1)
/100
KM68U4000BL-L
2.7~3.3V
85
1)
/100
KM68U4000BLI-L
2.7~3.3V
85
1)
/100
FUNCTIONAL BLOCK DIAGRAM
32-SOP
32-TSOP2
Forward
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-TSOP2
Reverse
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A18
A17
A17
A18
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
A3
Precharge circuit.
Memory array
1024 rows
512
×
8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A9 A8 A13A17A15
A11
A10
A18
A16
A14
A12
A7
A6
A4
I/O
1
Data
cont
Data
cont
I/O
8
A5
A1
A0
CS
WE
OE
Control
logic
A2
相關(guān)PDF資料
PDF描述
KM68U4000C 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM)
KM68V4000C 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM)
KM68U512A 64Kx8 bit Low Power and Low Voltage CMOS Static RAM(64K x8位高速CMOS 靜態(tài) RAM)
KM68V512A 64Kx8 bit Low Power and Low Voltage CMOS Static RAM(64K x8位高速CMOS 靜態(tài) RAM)
KM68U512B 64Kx8 bit Low Power and Low Voltage CMOS Static RAM(64K x8位高速CMOS 靜態(tài) RAM)
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