參數(shù)資料
型號(hào)： KM68V4000C
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低電壓CMOS 靜態(tài) RAM)
中文描述： 為512k x8位低功耗和低電壓的CMOS靜態(tài)RAM（為512k x8位低功耗低電壓的CMOS靜態(tài)RAM）的
文件頁(yè)數(shù)： 2/10頁(yè)
文件大小： 174K
代理商： KM68V4000C
KM68V4000C, KM68U4000C Family
512K
×
8 bit Low Power and Low Voltage CMOS Static RAM
Preliminary
CMOS SRAM
Revision 0.1
June 1998
2
GENERAL DESCRIPTION
The KM68V4000C and KM68U4000C families are fabricated
by SAMSUNG
′
s advanced CMOS process technology. The
families support various operating temperature range and have
various package type for user flexibility of system design. The
families also support low data retention voltage for battery
back-up operation with low data retention current.
FEATURES
Process Technology : TFT
Organization : 512K
×
8
Power Supply Voltage
KM68V4000C Family : 3.0~3.6V
KM68U4000C Family : 2.7~3.3V
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type : 32-SOP-525, 32-TSOP2-400F/R
32-TSOP1-0820F, 32-TSOP1-0813.4F
PIN DESCRIPTION
Name
Function
Name
Function
A
0
~A
18
Address Inputs
Vcc
Power
WE
Write Enable Input
Vss
Ground
CS
Chip Select Input
I/O
1
~I/O
8
Data Inputs/Outputs
OE
Output Enable Input
PRODUCT FAMILY
1. The paramerter is measured with 30pF test load.
Product Family
Operating Temperature
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
15
μ
A
20
μ
A
15
μ
A
20
μ
A
Operating
(I
CC2
, Max)
KM68V4000CL-L
Commercial(0~70
°
C)
Industrial(-40~85
°
C)
Commercial(0~70
°
C)
Industrial(-40~85
°
C)
3.0~3.6V
70
1)
/85
30mA
32-SOP
32-TSOP2-F/R
32-TSOP1-F
32-sTSOP1-F
KM68V4000CLI-L
3.0~3.6V
70
1)
/85
KM68U4000CL-L
2.7~3.3V
70
1)
/85/100
KM68U4000CLI-L
2.7~3.3V
70
1)
/85/100
FUNCTIONAL BLOCK DIAGRAM
32-SOP
32-TSOP2
(Forward)
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-TSOP2
(Reverse)
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A18
A18
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
A15
Precharge circuit.
Memory array
1024 rows
512
×
8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A2 A3 A8 A9 A10
A13
A11
A0
A1
A4
A5
A6
A7
A14
CS
WE
I/O
1
Data
cont
Data
cont
OE
I/O
8
A12
A16
A18
A11
A9
A8
A13
WE
A17
A15
VCC
A18
A16
A14
A12
A7
A6
A5
A4
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
32-TSOP1
32-
TSOP1
(Forward)
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A17
Control
logic
相關(guān)PDF資料
PDF描述
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