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參數(shù)資料
| 型號： | KM718FV4021 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx18 Synchronous SRAM(256Kx18位同步靜態(tài) RAM) |
| 中文描述： | 256Kx18同步SRAM（256Kx18位同步靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 278K |
| 代理商： | KM718FV4021 |
PRELIMINARY
Rev 0.2
Jan. 1998
KM718FV4021
128Kx36 & 256Kx18 SRAM
- 6 -
KM736FV4021
Z0=50
50
1.25V
*Capacitive load consists of all components
of the tester environment
AC TEST CONDITIONS
Parameter
Symbol
Value
Unit
Core Power Supply Voltage
V
DD
3.15~3.45
V
Output Power Supply Voltage
V
DDQ
2.4~2.6
V
Input High/Low Level
V
IH
/V
IL
1.7/0.7
V
Clock Input High/Low Level(PECL)
V
IH/
V
IL
2.4/1.5
V
Input Rise/Fall Time
T
R
/T
F
1.0/1.0
ns
Clock Input Rise/Fall Time(PECL)
T
R
/T
F
1.0/1.0
ns
Input and Out Timing Reference Level
1.25
V
Clock Input Timing Reference Level
Cross Point
V
AC TEST OUTPUT LOAD
Dout
20pF*
AC CHARACTERISTICS
Parameter
Symbol
-5
-6
-7
Unit
Note
Min
Max
Min
Max
Min
Max
Clock Cycle Time
t
KHKH
5.0
-
6.0
-
7.0
-
ns
Clock High Pulse Width
t
KHKL
1.5
-
1.5
-
1.5
-
ns
Clock Low Pulse Width
t
KLKH
1.5
-
1.5
-
1.5
-
ns
Clock High to Output Valid
t
KHQV
-
2.5
-
3.0
-
3.5
ns
Clock High to Output Hold
t
KHQX
0.5
-
0.5
-
0.5
-
ns
Address Setup Time
t
AVKH
0.5
-
0.5
-
0.5
-
ns
Address Hold Time
t
KHAX
1.0
-
1.0
-
1.0
-
ns
Write Data Setup Time
t
DVKH
0.5
-
0.5
-
0.5
-
ns
Write Data Hold Time
t
KHDX
1.0
-
1.0
-
1.0
-
ns
SW, SW[a:d] Setup Time
t
WVKH
0.5
-
0.5
-
0.5
-
ns
SW, SW[a:d] Hold Time
t
KHWX
1.0
-
1.0
-
1.0
-
ns
SS Setup Time
t
SVKH
0.5
-
0.5
-
0.5
-
ns
SS Hold Time
t
KHSX
1.0
-
1.0
-
1.0
-
ns
Clock High to Output Hi-Z
t
KHQZ
-
2.5
-
3.0
-
3.5
ns
Clock High to Output Low-Z
t
KHQX1
0.5
-
0.5
-
0.5
-
ns
G High to Output High-Z
t
GHQZ
-
2.5
-
3.0
-
3.5
ns
G Low to Output Low-Z
t
GLQX
0.5
-
0.5
-
0.5
-
ns
G Low to Output Valid
t
GLQV
-
2.5
-
3.0
-
3.5
ns
ZZ High to Power Down(Sleep Time)
t
ZZE
-
5.0
-
6.0
-
7.0
ns
ZZ Low to Recovery(Wake-up Time)
t
ZZR
-
5.0
-
6.0
-
7.0
ns
PIN CAPACITANCE
NOTE
: Periodically sampled and not 100% tested.(dV=0V, f=1MHz)
Parameter
Symbol
Typ
Max
Unit
Input Capacitance
C
IN
4
5
pF
Output Capacitance
C
OUT
7
8
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM736FV4021 | 128Kx36 Synchronous SRAM(128Kx36位同步靜態(tài) RAM) |
| KM718FV4022 | 256Kx18 Synchronous SRAM(256Kx18位同步靜態(tài) RAM) |
| KM736FV4022 | 128Kx36 Synchronous SRAM(128Kx36位同步靜態(tài) RAM) |
| KM718V089 | 512Kx36 & 1Mx18 Synchronous SRAM |
| KM718FV4021H-5 | 128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM718FV4021H-5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
| KM718FV4021H-6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
| KM718FV4021H-7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
| KM718N | 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:10mm Adjustable Unshielded IFT Coils |
| KM718N-LFR | 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:10mm Adjustable Unshielded IFT Coils |
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