- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373162 > KM718FV4022 (SAMSUNG SEMICONDUCTOR CO. LTD.) 256Kx18 Synchronous SRAM(256Kx18位同步靜態(tài) RAM) PDF資料下載
參數(shù)資料
| 型號： | KM718FV4022 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx18 Synchronous SRAM(256Kx18位同步靜態(tài) RAM) |
| 中文描述： | 256Kx18同步SRAM（256Kx18位同步靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 267K |
| 代理商： | KM718FV4022 |
PRELIMINARY
Rev 0.2
Jan. 1998
KM718FV4022
128Kx36 & 256Kx18 SRAM
- 6 -
KM736FV4022
AC CHARACTERISTICS
Parameter
Symbol
-65
-70
-75
Unit
Note
Min
6.0
2.0
2.0
-
-
0.5
0.5
1.0
0.5
1.0
0.5
1.0
0.5
1.0
-
0.5
-
0.5
-
-
-
Max
-
-
-
6.5
2.5
-
-
-
-
-
-
-
-
-
2.5
-
2.5
-
2.5
6.5
6.0
Min
6.5
2.0
2.0
-
-
0.5
0.5
1.0
0.5
1.0
0.5
1.0
0.5
1.0
-
0.5
-
0.5
-
-
-
Max
-
-
-
7.0
2.5
-
-
-
-
-
-
-
-
-
3.0
-
3.0
-
3.0
7.0
6.5
Min
7.0
2.0
2.0
-
-
0.5
0.5
1.0
0.5
1.0
0.5
1.0
0.5
1.0
-
0.5
-
0.5
-
-
-
Max
-
-
-
7.5
3.0
-
-
-
-
-
-
-
-
-
3.5
-
3.5
-
3.5
7.5
7.0
Clock Cycle Time
Clock High Pulse Width
Clock Low Pulse Width
Clock High to Output Valid
Clock Low to Output Valid
Clock Low to Output Hold
Address Setup Time
Address Hold Time
Write Data Setup Time
Write Data Hold Time
SW, SW[a:d] Setup Time
SW, SW[a:d] Hold Time
SS Setup Time
SS Hold Time
Clock High to Output Hi-Z
Clock Low to Output Low-Z
G High to Output High-Z
G Low to Output Low-Z
G Low to Output Valid
ZZ High to Power Down(Sleep Time)
ZZ Low to Recovery(Wake-up Time)
t
KHKH
t
KHKL
t
KLKH
t
KHQV
t
KLQV
t
KLQX
t
AVKH
t
KHAX
t
DVKH
t
KHDX
t
WVKH
t
KHWX
t
SVKH
t
KHSX
t
KHQZ
t
KLQX1
t
GHQZ
t
GLQX
t
GLQV
t
ZZE
t
ZZR
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Z0=50
50
1.25V
*Capacitive load consists of all components
of the tester environment
AC TEST OUTPUT LOAD
Dout
20pF*
PIN CAPACITANCE
NOTE
: Periodically sampled and not 100% tested.(dV=0V, f=1MHz)
Parameter
Symbol
Typ
Max
Unit
Input Capacitance
C
IN
4
5
pF
Output Capacitance
C
OUT
7
8
pF
AC TEST CONDITIONS
Parameter
Symbol
Value
Unit
Core Power Supply Voltage
V
DD
3.15~3.45
V
Output Power Supply Voltage
V
DDQ
2.4~2.6
V
Input High/Low Level
V
IH
/V
IL
1.7/0.7
V
Clock Input High/Low Level(PECL)
V
IH/
V
IL
2.4/1.5
V
Input Rise/Fall Time
T
R
/T
F
1.0/1.0
ns
Clock Input Rise/Fall Time(PECL)
T
R
/T
F
1.0/1.0
ns
Input and Out Timing Reference Level
1.25
V
Clock Input Timing Reference Level
Cross Point
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM736FV4022 | 128Kx36 Synchronous SRAM(128Kx36位同步靜態(tài) RAM) |
| KM718V089 | 512Kx36 & 1Mx18 Synchronous SRAM |
| KM718FV4021H-5 | 128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
| KM718FV4021H-6 | 128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
| KM718FV4021H-7 | 128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM718N | 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:10mm Adjustable Unshielded IFT Coils |
| KM718N-LFR | 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:10mm Adjustable Unshielded IFT Coils |
| KM718V089 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 Synchronous SRAM |
| KM718V789AT-60 | 制造商:Samsung Semiconductor 功能描述: |
| KM718V887 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx18 Synchronous SRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。