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參數資料
| 型號： | KM718V089T-60 |
| 元件分類： | SRAM |
| 英文描述： | 1M X 18 CACHE SRAM, 3.5 ns, PQFP100 |
| 封裝： | 20 X 14 MM, TQFP-100 |
| 文件頁數： | 2/20頁 |
| 文件大?。?/td> | 536K |
| 代理商： | KM718V089T-60 |
512Kx36 & 1Mx18 Synchronous SRAM
- 10 -
Rev 1.0
December 1999
KM718V089
KM736V989
DC ELECTRICAL CHARACTERISTICS(VDD=3.3V+0.165V/-0.165V, TA=0
°C to +70°C)
Notes : 1. Reference AC Operating Conditions and Characteristics for input and timing.
2. Data states are all zero.
3. In Case of I/O Pins, the Max. VIH=VDDQ+0.3V.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT
NOTES
Input Leakage Current(except ZZ)
IIL
VDD = Max ; VIN=VSS to VDD
-2
+2
A
Output Leakage Current
IOL
Output Disabled, VOUT=VSS to VDDQ
-2
+2
A
Operating Current
ICC
Device Selected, IOUT=0mA,
ZZ
≤VIL , Cycle Time ≥ tCYC Min
-54
-
450
mA
1,2
-60
-
420
-67
-
400
-72
-
380
-10
-
320
Standby Current
ISB
Device deselected, IOUT=0mA,
ZZ
≤VIL, f=Max,
All Inputs
≤0.2V or ≥ VDD-0.2V
-54
-
130
mA
-60
-
120
-67
-
110
-72
-
90
-10
-
80
ISB1
Device deselected, IOUT=0mA, ZZ
≤0.2V,
f = 0, All Inputs=fixed (VDD-0.2V or 0.2V)
-
30
mA
ISB2
Device deselected, IOUT=0mA, ZZ
≥VDD-
0.2V, f=Max, All Inputs
≤VIL or ≥VIH
-
30
mA
Output Low Voltage(3.3V I/O)
VOL
IOL=8.0mA
-
0.4
V
Output High Voltage(3.3V I/O)
VOH
IOH=-4.0mA
2.4
-
V
Output Low Voltage(2.5V I/O)
VOL
IOL=1.0mA
-
0.4
V
Output High Voltage(2.5V I/O)
VOH
IOH=-1.0mA
2.0
-
V
Input Low Voltage(3.3V I/O)
VIL
-0.3*
0.8
V
nput High Voltage(3.3V I/O)
VIH
2.0
VDD+0.5**
V
3
Input Low Voltage(2.5V I/O)
VIL
-0.3*
0.7
V
Input High Voltage(2.5V I/O)
VIH
1.7
VDD+0.5**
V
3
VSS
VIH
VSS-1.0V
20% tCYC(MIN)
TEST CONDITIONS
PARAMETER
VALUE
Input Pulse Level(for 3.3V I/O)
0 to 3.0V
Input Pulse Level(for 2.5V I/O)
0 to 2.5V
Input Rise and Fall Time(Measured at 20% to 80% for 3.3V I/O)
1.0V/ns
Input Rise and Fall Time(Measured at 20% to 80% for 2.5V I/O)
1.0V/ns
Input and Output Timing Reference Levels for 3.3V I/O
1.5V
Input and Output Timing Reference Levels for 2.5V I/O
VDDQ/2
Output Load
See Fig. 1
(VDD=3.3V+0.165V/-0.165V,VDDQ=3.3V+0.165/-0.165V or VDD=3.3V+0.165V/-0.165V,VDDQ=2.5V+0.4V/-0.125V, TA=0to70
°C)
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