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參數(shù)資料
| 型號： | KMM364E400CK |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4Mx64 DRAM DIMM(4Mx64 動態(tài) RAM模塊) |
| 中文描述： | 4Mx64的DRAM內存（4Mx64動態(tài)內存模塊） |
| 文件頁數(shù)： | 3/20頁 |
| 文件大?。?/td> | 391K |
| 代理商： | KMM364E400CK |
DRAM MODULE
KMM364E410CK/CS
KMM364E400CK/CS
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one hyper page mode cycle,
t
HPC
.
* NOTE
:
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
I
CC1
*
I
CC2
I
CC3
*
I
CC4
*
I
CC5
I
CC6
*
I
I(L)
I
O(L)
V
OH
V
OL
Symbol
Speed
KMM364E400CK/CS
Min
KMM364E410CK/CS
Min
Unit
Max
1440
1280
100
1440
1280
1280
1120
30
1440
1280
40
5
-
0.4
Max
1760
1600
100
1760
1600
1440
1280
30
1760
1600
40
5
-
0.4
I
CC1
-5
-6
-
-
-
-
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
I
CC2
I
CC3
Don
′
t care
-5
-6
-5
-6
Don
′
t care
-5
-6
-
-
-
-
-
-
-
-
-
-
-
I
CC4
-
-
I
CC5
I
CC6
-
-
-
I
I(L)
I
O(L)
V
OH
V
OL
Don
′
t care
-40
-5
2.4
-
-40
-5
2.4
-
Don
′
t care
: Operating Current * (RAS, CAS, Address cycling @
t
RC
=min)
: Standby Current (RAS=CAS=W=V
IH
)
: RAS Only Refresh Current * (CAS=V
IH
, RAS cycling @
t
RC
=min)
: EDO Mode Current * (RAS=V
IL
, CAS cycling :
t
HPC
=min)
: Standby Current (RAS=CAS=W=Vcc-0.2V)
: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @
t
RC
=min)
: Input Leakage Current (Any input 0
≤
V
IN
≤
Vcc+0.5V, all other pins not under test=0 V)
: Output Leakage Current(Data Out is disabled, 0V
≤
V
OUT
≤
Vcc)
: Output High Voltage Level (I
OH
= -5mA)
: Output Low Voltage Level (I
OL
= 4.2mA)
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70
°
C)
*1 : V
CC
+2.0V/20ns, Pulse width is measured at V
CC
.
*2 : -2.0V/20ns, Pulse width is measured at V
SS
.
Item
Symbol
Min
4.5
0
2.4
-1.0
*2
Typ
Max
5.5
0
V
CC
+1
*1
0.8
Unit
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
V
CC
V
SS
V
IH
V
IL
5.0
0
-
-
V
V
V
V
ABSOLUTE MAXIMUM RATINGS *
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
Item
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
D
I
OS
Rating
-1 to +7.0
-1 to +7.0
-55 to +125
16
50
Unit
V
V
°
C
W
mA
Voltage on any pin relative V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KMM366S1623AT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| KMM366S1623AT-G0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| KMM366S1623AT-G2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| KMM366S1623AT-G8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| KMM366S1623BT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:PC100 SDRAM MODULE |
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