參數(shù)資料
型號(hào)： KMM466S824BT2
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 8Mx64 SDRAM SODIMM(8M x 64 動(dòng)態(tài) RAM模塊)
中文描述： 8Mx64 SDRAM內(nèi)存的SODIMM（8米× 64動(dòng)態(tài)內(nèi)存模塊）
文件頁(yè)數(shù)： 1/13頁(yè)
文件大?。?/td> 126K
代理商： KMM466S824BT2
144pin SDRAM SODIMM
KMM466S824BT2
REV. 6 June '98
Revision History
Revision .2 (March 1998)
Some Parameter values & Chracteristics of comp. level are changed as below :
- Input leakage Currents (Inputs) :
±
5uA to
±
1uA.
Input leakage Currents (I/O) :
±
5uA to
±
1.5uA.
- Cin to be measured at V
DD
= 3.3V, T
A
= 23
°
C, f = 1MHz, V
REF
=1.4V
±
200 mV.
- AC Operating Condition is changed as defined :
V
IH
(max) = 5.6V AC.The overshoot voltage duration is
≤
3ns.
V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
- I
CC3
PS is changed 1mA to 2mA.
- I
CC4
value based on comp. is changed.
Revision .3 (March 1998)
- I
CC2
N, I
CC2
NS, I
CC3
N & I
CC3
NS in comp. level values are changed.
Revision .4 (April 1998)
- Self refresh current(I
CC6
) is changed.
Revision .6 (June 1998)
- t
SH
(-10 binning) is revised.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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KMM471M200JBNTB 制造商:United Chemi-Con 功能描述:SN200X147 UCC S11F2B
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