| 型號 | 廠商 | 描述 |
| kmm374f203ck 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 72 DRAM DIMM(2Mx72 動態(tài) RAM模塊) |
| kmm374f803bk1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 8M x 72 DRAM DIMM(8Mx72 動態(tài) RAM模塊) |
| kmm375s1620bt 2 3 4 5 6 7 8 9 10 11 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16Mx72 SDRAM DIMM(16M x 72 動態(tài) RAM模塊) |
| kmm375s6427t 2 3 4 5 6 7 8 9 10 11 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64Mx72 SDRAM DIMM(64Mx72 動態(tài) RAM模塊) |
| kmm377s1620bt1 2 3 4 5 6 7 8 9 10 11 12 13 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16Mx72 SDRAM DIMM(16M x 72 動態(tài) RAM模塊) |
| kmm377s3320t1 2 3 4 5 6 7 8 9 10 11 12 13 14 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32Mx72 SDRAM DIMM(32M x 72 動態(tài) RAM模塊) |
| kmm377s6427t1 2 3 4 5 6 7 8 9 10 11 12 13 14 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64Mx72 SDRAM DIMM(64Mx72 動態(tài) RAM模塊) |
| kmm378s1620bt 2 3 4 5 6 7 8 9 10 11 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16Mx72 SDRAM DIMM(16M x 72 動態(tài) RAM模塊) |
| kmm466f124ct1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 64 DRAM SODIMM(1M x 64 動態(tài) RAM模塊) |
| kmm466f104ct1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 64 DRAM SODIMM(1M x 64 動態(tài) RAM模塊) |
| kmm466f213cs2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 64 DRAM SODIMM(2M x 64 動態(tài) RAM模塊) |
| kmm466f203cs2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 64 DRAM SODIMM(2M x 64 動態(tài) RAM模塊) |
| kmm466s424bt 2 3 4 5 6 7 8 9 10 11 12 13 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4Mx64 SDRAM SODIMM(4M x 64 動態(tài) RAM模塊) |
| kmm466s823bt2 2 3 4 5 6 7 8 9 10 11 12 13 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 8Mx64 SDRAM SODIMM(8M x 64 動態(tài) RAM模塊) |
| kmm466s824bt2 2 3 4 5 6 7 8 9 10 11 12 13 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 8Mx64 SDRAM SODIMM(8M x 64 動態(tài) RAM模塊) |
| kmm466s924t 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 8Mx64 SDRAM SODIMM(8M x 64 動態(tài) RAM模塊) |
| kmm53216000ck 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| kmm53216000bkg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| kmm53216000ckg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| kmm53216004bk 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 32 DRAM SIMM(16M x 32 動態(tài) RAM模塊) |
| kmm53216004bv 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 32 DRAM SIMM(16M x 32 動態(tài) RAM模塊) |
| kmm53216004ck 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| kmm53216004bkg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| kmm53216004ckg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| kmm5322104cku 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V |
| kmm5322104ckug 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V |
| kmm5322200c2w 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V |
| kmm5322200c2wg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V |
| kmm5322204c2w 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V |
| kmm5322204c2wg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V |
| kmm53232000bk 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| kmm53232000ck 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| kmm53232000bkg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| kmm53232000ckg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| kmm53232004bk 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| kmm53232004ck 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| kmm53232004bkg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| kmm53232004ckg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V |
| kmm53232004bv 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32M x 32 DRAM SIMM(32M x 32 動態(tài) RAM模塊) |
| kmm5324000bsw 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 32 DRAM SIMM(4M x 32 動態(tài) RAM模塊) |
| kmm5324004bsw 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 32 DRAM SIMM(4M x 32 動態(tài) RAM模塊) |
| kmm5328004bsw 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 8M x 32 DRAM SIMM(8M x 32 動態(tài) RAM模塊) |
| kmm5361203c2wg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh |
| kmm5361205c2w 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh |
| kmm5361205c2wg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh |
| kmm53632000bk 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| kmm53632000ck 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| kmm53632000bkg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| kmm53632000ckg 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
| kmm53632004bk 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V |